Si8220/21
Rev. 1.2 5
Input Reverse Voltage
BV
R
I
R
=10mA.
Measured at ANODE with
respect to CATHODE.
0.5 — — V
Input Capacitance
C
IN
—10 — pF
VDD Undervoltage Threshold
2
VDD
UV+
V
DD
rising
5 V Threshold
See Figure 9 on page 15.
5.20 5.80 6.30
V
8 V Threshold
See Figure 10 on page 15.
7.50 8.60 9.40
V
10 V Threshold
See Figure 11 on page 15.
9.60 11.1 12.2 V
12.5 V Threshold
See Figure 12 on page 15.
12.4 13.8 14.8
VDD Undervoltage Threshold
2
VDD
UV–
V
DD
falling
5 V Threshold
See Figure 9 on page 15.
4.90 5.52 6.0 V
8 V Threshold
See Figure 10 on page 15.
7.20 8.10 8.70 V
10 V Threshold
See Figure 11 on page 15.
9.40 10.1 10.9
V
12.5 V Threshold
See Figure 12 on page 15.
11.6 12.8 13.8
VDD Lockout Hysteresis
VDD
HYS
UVLO voltage = 5 V — 280 — mV
VDD Lockout Hysteresis
VDD
HYS
UVLO voltage = 8 V — 600 — mV
VDD Lockout Hysteresis
VDD
HYS
UVLO voltage = 10 V or
12.5 V
— 1000 — mV
AC Specifications
Propagation Delay Time to High
Output Level
t
PLH
C
L
= 200 pF — — 60 ns
Propagation Delay Time to Low
Output Level
t
PHL
C
L
= 200 pF — — 40 ns
Output Rise and Fall Time
t
R
, t
F
(0.5 A), C
L
= 200 pF — — 30
ns
(2.5 A), C
L
= 200 pF — — 20
Device Startup Time
t
START
Time from
V
DD
=V
DD_UV+
to V
O
—— 40 µs
Common Mode
Transient Immunity
CMTI
Input ON or OFF
V
CM
= 1500 V (see Figure 3)
—30 —kV/µs
Table 1. Electrical Characteristics (Continued)
1
V
DD
=12V or 15V, V
SS
= GND, T
A
= –40 to +125 °C; typical specs at 25 °C.
Parameter Symbol Test Conditions Min Typ Max Units
Notes:
1. VDD = 12 V for 5, 8, and 10 V UVLO devices; VDD = 15 V for 12.5 V UVLO devices.
2. See "9.Ordering Guide" on page 22 for more information.
