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RSBC6.8CST2RA

P1-P3P4-P4
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.11 - Rev.A
Bi direction ESD Protection diode
RSBC6.8CS
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
ESD Protection,bi direction
Features
1)Ultra small mold type.(VMN2)
2)Ultra low capacitance.
3)High reliability.
Construction
Silicon epitaxial planar
Structure
Absolute maximum ratings (Ta=25°C)
Symbol Unit
Pd mW
Tj
°C
Tstg
°C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
V
z
6.62 - 7.24 V
I
Z
=5mA
I
R
- - 0.5 μA
V
R
=3.5V
Ct - 1.0 - pF
V
R
=0V , f=1MHz
Junction temperature
150
Taping dimensions (Unit : mm)
Parameter
Limits
Power dissipation
100
Capacitance between terminals
Storage temperature
−55 to +150
Parameter Conditions
Zener voltage
Reverse current
0.16±0.05
0.37±0.03
0.6±0.05
0.35±0.1
0.156
ROHM : VMN2
dot (year week factory) + day
VMN2
0.55
0.5
0.45
0.45
0.7±0.05
4.0±0.1
2±0.05
φ0.5
4±0.1
2±0.05
φ1.55
1.75±0.1
8.0±0.2
3.5±0.05
1.1±0.05
0.2±0.05
0.52
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSBC6.8CS
　
2/3
2011.11 - Rev.A
0.01
0.1
1
10
6 6.5 7 7.5
Ta=150°C
Ta=75°C
Ta=25°C
Ta=125°C
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1
10
100
1000
10000
0 1 2 3 4 5
Ta=125°C
Ta=25°C
Ta=75°C
Ta=150°C
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
REVERSE CURRENT:I
R
(pA)
0.1
1
10
0 1 2 3 4 5
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
f=1MHz
5
6
7
8
9
10
Vz DISPERSION MAP
ZENER VOLTAGE:Vz(V)
AVE:7.09V
Ta=25°C
I
Z
=5mA
n=30pcs
0
2
4
6
8
10
12
14
16
I
R
DISPERSION MAP
Ta=25°C
V
R
=3.5V
n=30pcs
AVE:13.4pA
REVERSE CURRENT:I
R
(pA)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Ct DISPERSION MAP
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
AVE:1.47pF
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSBC6.8CS
　
3/3
2011.11 - Rev.A
10
100
1000
0.1 1 10
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
TIME : t(s)
Rth-t CHARACTERISTICS
0
5
10
15
20
25
30
No break at 30kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE=4.38kV
C=150pF
R=330Ω
AVE=16kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
P1-P3P4-P4

RSBC6.8CST2RA

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