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MBR120LSFT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 2
1 Publication Order Number:
MBR120LSFT1/D
MBR120LSFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• ESD Ratings: Machine Model, C
Human Body Model, 3B
• Pb−Free Packages are Available
Mechanical Characteristics
• Reel Options: MBR120LSFT1 = 3,000 per 7″ reel/8 mm tape
MBR120LSFT3 = 10,000 per 13″ reel/8 mm tape
• Device Marking: L2L
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Package Shipping
†
ORDERING INFORMATION
MBR120LSFT1 SOD−123FL
SOD−123FL
CASE 498
PLASTIC
3000/Tape & Ree
l
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
MBR120LSFT3 SOD−123FL 10000/Tape & Ree
l
http://onsemi.com
L2L
M
G
G
MARKING DIAGRAM
L2L = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MBR120LSFT1G SOD−123FL
(Pb−Free)
3000/Tape & Ree
l
MBR120LSFT3G SOD−123FL
(Pb−Free)
10000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBR120LSFT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current (At Rated V
R
, T
L
= 115°C) I
O
1.0 A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
L
= 110°C)
I
FRM
2.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
50 A
Storage Temperature T
stg
−55 to 150 °C
Operating Junction Temperature T
J
−55 to 125 °C
Voltage Rate of Change (Rated V
R
, T
J
= 25°C) dv/dt 10,000
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
tjl
R
tjl
R
tja
R
tja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
2
).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
V
F
T
J
= 25°C T
J
= 85°C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.34
0.45
0.65
0.26
0.415
0.67
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
I
R
T
J
= 25°C T
J
= 85°C
mA
(V
R
= 20 V)
(V
R
= 10 V)
0.40
0.10
25
18
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MBR120LSFT1
http://onsemi.com
3
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
0.1
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.70.3 0.5 0.9
T
J
= 85°C
T
J
= 125°C
T
J
= −40°C
T
J
= 25°C
0.1
10
1.0
0.1
0.70.3 0.5 0.
9
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
I
R
, REVERSE CURRENT (AMPS)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
200
V
R
, REVERSE VOLTAGE (VOLTS)
100E−3
10E−3
1.0E−3
100E−6
10E−6
1.0E−6
V
R
, REVERSE VOLTAGE (VOLTS)
5.0 10 15 2
0
0
1.0E+0
100E−6
10E−6
5.0 10 15
T
J
= 125°C
T
J
= 85°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
100E−3
10E−3
1.0E−3
I
O
, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
T
L
, LEAD TEMPERATURE (°C)
4525
1.8
1.2
1.0
0.6
0.2
0
85 105 145
0.8
65 125
0.4
P
FO
, AVERAGE POWER DISSIPATION (WATTS)
I
pk
/I
o
= 5
Figure 6. Forward Power Dissipation
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.20
0.7
0.6
0.5
0.3
0.1
0
1.00.4 0.8 1.2 1.6
0.4
SQUARE
WAVE
dc
I
pk
/I
o
= p
I
pk
/I
o
= 10
I
pk
/I
o
= 20
0.6 1.4
0.2
1.4
1.6
I
pk
/I
o
= 20
I
pk
/I
o
= 10
I
pk
/I
o
= 5
I
pk
/I
o
= p
SQUARE
WAVE
dc
freq = 20 kHz
P1-P3P4-P6

MBR120LSFT1

Mfr. #:
Buy MBR120LSFT1
Manufacturer:
ON Semiconductor
Description:
DIODE SCHOTTKY 20V 1A SOD123L
Lifecycle:
New from this manufacturer.
Delivery:
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