IRLB3036GPBF Datasheet IRLB3036GPBF | P1-P3

10/16/09

www.irf.com 1

HEXFET

®

Power MOSFET

S

D

G

IRLB3036GPbF

GDS

Gate Drain Source

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Benefits

l Optimized for Logic Level Drive

l Very Low R

DS(ON)

at 4.5V V

GS

l Superior R*Q at 4.5V V

GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

l Halogen-Free

TO-220AB

IRLB3036GPbF

V

DSS

60V

R

DS

(

on

)

typ.

1.9mΩ

max.

2.4m

Ω

I

D

(

Silicon Limited

)

270A

I

D (Package Limited)

195A

Absolute Maximum Ratings

Symbol Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V (Package Limited)

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

dv/dt

Peak Diode Recovery

V/ns

T

J

Operating Junction and

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

E

AS (Thermally limited)

Sin

g

le Pulse Avalanche Ener

g

y

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Ener

g

y

mJ

Thermal Resistance

Symbol Parameter Typ. Max. Units

R

θJC

Junction-to-Case

–––

0.40

R

θCS

Case-to-Sink, Flat, Greased Surface

0.50 –––

R

θJA

Junction-to-Ambient

––– 62

-55 to + 175

300

Max.

270

190

1100

195

See Fig. 14, 15, 22a, 22b

A

°C

°C/W

290

380

8.0

±16

2.5

10lb

in (1.1N m)

PD - 96275

IRLB3036GPbF

2 www.irf.com

S

D

G

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C

oss

eff. (TR) is a fixed capacitance that gives the same charging time as

C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 C

oss

eff. (ER) is a fixed capacitance that gives the same energy as

C

oss

while V

DS

is rising from 0 to 80% V

DSS

.

 R

θ

is measured at T

J

approximately 90°C.

Notes:

 Calcuted continuous current based on maximum allowable junction

temperature Bond wire current limit is 195A. Note that current

limitation arising from heating of the device leds may occur with

some lead mounting arrangements.

 Repetitive rating; pulse width limited by max. junction

temperature.

 Limited by T

Jmax

, starting T

J

= 25°C, L = 0.021mH

R

G

= 25Ω, I

AS

= 165A, V

GS

=10V. Part not recommended for use

above this value .

 I

SD

≤ 165A, di/dt ≤ 430A/µs, V

DD

≤ V

(BR)DSS

, T

J

≤ 175°C.

Static @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

s

V

(BR)DSS

Drain-to-Source Breakdown Volta

g

e 60 ––– ––– V

∆V

(BR)DSS

/

∆T

J

Breakdown Volta

g

e Temp. Coefficient ––– 0.061 ––– V/°C

––– 1.9 2.4

––– 2.2 2.8

V

GS(th)

Gate Threshold Volta

g

e 1.0 ––– 2.5 V

I

DSS

Drain-to-Source Leaka

g

e Current ––– ––– 20

––– ––– 250

I

GSS

Gate-to-Source Forward Leaka

g

e ––– ––– 100

Gate-to-Source Reverse Leaka

g

e ––– ––– -100

R

G

(

int

)

Internal Gate Resistance

–––

2.0 –––

Ω

Dynamic @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit

s

g

fs Forward Transconductance 340 ––– ––– S

Q

g

Total Gate Char

g

e ––– 91 140

Q

gs

Gate-to-Source Char

g

e ––– 31 –––

Q

gd

Gate-to-Drain ("Miller") Char

g

e ––– 51 –––

Q

sync

Total Gate Char

g

e Sync. (Q

g

- Q

gd

)

––– 40 –––

t

d(on)

Turn-On Delay Time ––– 66 –––

t

r

Rise Time ––– 220 –––

t

d(off)

Turn-Off Delay Time ––– 110 –––

t

f

Fall Time ––– 110 –––

C

iss

Input Capacitance ––– 11210 –––

C

oss

Output Capacitance ––– 1020 –––

C

rss

Reverse Transfer Capacitance ––– 500 –––

C

oss

eff. (ER)

Effective Output Capacitance (Energy Related)

––– 1430 –––

C

oss

eff. (TR)

Effective Output Capacitance (Time Related)

––– 1880 –––

Diode Characteristics

Symbol Parameter Min. Typ. Max. Unit

s

I

S

Continuous Source Current ––– –––

(Body Diode)

I

SM

Pulsed Source Current ––– –––

(Body Diode)

V

SD

Diode Forward Volta

g

e ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 62 –––

T

J

= 25°C V

R

= 51V,

––– 66 –––

T

J

= 125°C I

F

= 165A

Q

rr

Reverse Recovery Char

g

e ––– 310 –––

T

J

= 25°C

di/d

t

=

100A/

µs

––– 360 –––

T

J

= 125°C

I

RRM

Reverse Recovery Current ––– 4.4 ––– A

T

J

= 25°C

t

on

Forward Turn-On Time Intrinsic turn-on time is ne

g

li

g

ible (turn-on is dominated by LS+LD)

V

GS

= 4.5V, I

D

= 140A

m

Ω

I

D

= 165A

R

G

= 2.1Ω

V

GS

= 4.5V

V

DD

= 39V

I

D

= 165A, V

DS

=0V, V

GS

= 4.5V

Conditions

V

DS

= 10V, I

D

= 165A

I

D

= 165A

R

DS(on)

Static Drain-to-Source On-Resistance

pF

A

270

1100

nC

µA

nA

nC

ns

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 60V, V

GS

= 0V

V

DS

= 60V, V

GS

= 0V, T

J

= 125°C

ns

V

GS

= 0V, V

DS

= 0V to 48V

MOSFET symbol

T

J

= 25°C, I

S

= 165A, V

GS

= 0V

integral reverse

p-n junction diode.

V

GS

= 16V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 5mA

V

GS

= 10V, I

D

= 165A

V

GS

= -16V

showing the

V

DS

= 30V

Conditions

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 50V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 48V

IRLB3036GPbF

www.irf.com 3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage

1 2 3 4 5 6

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

≤

60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 165A

V

GS

= 10V

1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

≤

60µs PULSE WIDTH

Tj = 25°C

2.7V

0.1 1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.7V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

4.5V

4.0V

3.5V

3.3V

3.0V

BOTTOM 2.7V

0 20 40 60 80 100 120

Q

G

,

Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 48V

V

DS

= 30V

I

D

= 165A

IRLB3036GPBF

IRLB3036GPBF

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