SPEC NO: DSAM8407 REV NO: V.2A DATE: APR/06/2015 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301000155
Selection Guide
Notes:
1. Luminous intensity / luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
Hyper Red (AlGaInP) White Diffused
88000 260000
Common Anode,
Rt.Hand Decimal
*31000 *70000
SA10-11SURKWA
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Hyper Red 645
nm I
F=20mA
λD [1] Dominant Wavelength Hyper Red 630
nm I
F=20mA
Δλ1/2 Spectral Line Half-width Hyper Red 28
nm I
F=20mA
C Capacitance Hyper Red 35
pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
(DP)
Hyper Red
3.9
(1.95)
5.0
(2.5)
V I
F=20mA
I
R
Reverse Current
(Per chip)
Hyper Red
10 uA
V
R=5V
(V
R=5V)
Parameter Hyper Red Units
Power dissipation
(Per chip)
75 mW
DC Forward Current 30 mA
Peak Forward Current [1] 185 mA
Reverse Voltage
(Per chip)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
Notes:
1. Wavelength: + / -1nm.
2. Forward Voltage: + / -0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
4. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or
premature failure.
