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IXTX8N150L

P1-P3P4-P5
© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 1500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 8 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
20 A
P
D
T
C
= 25°C 700 W
T
J
-55 to +150 °C
T
JM
150 °C
T
stg
-55 to +150 °C
T
L
1.6mm (0.063 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (IXTK) 1.13/10 Nm/lb.in.
F
C
Mounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 1500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 5.0 8.0 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
50 μA
V
GS
= 0V T
J
= 125°C 3 mA
R
DS(on)
V
GS
= 20V, I
D
= 0.5 • I
D25
, Note 1 3.6 Ω
Linear Power MOSFET
w/Extended FBSOA
IXTK8N150L
IXTX8N150L
N-Channel Enhancement Mode
Guaranteed FBSOA
V
DSS
= 1500V
I
D25
= 8A
R
DS(on)
< 3.6
ΩΩ
ΩΩ
Ω
DS99616A(2/09)
Preliminary Technical Information
Features
z
Designed for Linear Operations
z
International Standard Packages
z
Guaranteed FBSOA at 60°C
z
Molding Epoxies Meet UL94 V-0
Flammability Classification
Applications
z
Programmable Loads
z
Current Regulators
z
DC-DC Convertors
z
Battery Chargers
z
DC Choppers
z
Temperature and Lighting Controls
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
G = Gate D = Drain
S = Source TAB = Drain
TO-264(IXTK)
G
D
S
G
D
S
PLUS247(IXTX)
(TAB)
(TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK8N150L
IXTX8N150L
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 50V, I
D
= 0.5 • I
D25
, Note 1 1.4 2.3 3.2 S
C
iss
8000 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 405 pF
C
rss
70 pF
t
d(on)
36 ns
t
r
18 ns
t
d(off)
90 ns
t
f
95 ns
Q
g(on)
250 nC
Q
gs
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
80 nC
Q
gd
116 nC
R
thJC
0.18 °C/W
R
thCS
0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS
= 1000V, I
D
= 0.5A, T
C
= 60°C, T
P
= 3s 500 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 8 A
I
SM
Repetitive, Pulse Width Limited by T
JM
32 A
V
SD
I
F
= 8A, V
GS
= 0V, Note 1 1.2 V
t
rr
I
F
= I
S
, -di/dt =100A/μs, V
R
= 100V 1700 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
V
GS
= 15V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2Ω (External)
TO-264 (IXTK) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A
2
1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b
2
2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
(IXTX) Outline
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 1. Extended Output Characteristics
@ 25ºC
0
1
2
3
4
5
6
7
8
9
10
11
0 4 8 121620242832
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
9
V
10
V
12
V
14V
Fig. 2. Output Characteristics
@ 125ºC
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35 40 45 50
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
9
V
12V
8V
10V
Fig. 3. R
DS(on)
Normalized to I
D
= 4A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 8A
I
D
= 4A
Fig. 4. R
DS(on)
Normalized to I
D
= 4A Value
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
01234567891011
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 20V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Input Admittance
0
1
2
3
4
5
6
7
8
9
6 7 8 9 10 11 12 13 14
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 5. Maximum Drain Current vs.
Case Temperature
0
1
2
3
4
5
6
7
8
9
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXTK8N150L
IXTX8N150L
P1-P3P4-P5

IXTX8N150L

Mfr. #:
Buy IXTX8N150L
Manufacturer:
Littelfuse
Description:
MOSFET Standard Linear Power MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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