OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PD54008L-E

P1-P3P4-P6P7-P9P10-P12P13-P15
January 2007 Rev 2 1/15
15
PD54008L-E
RF power transistors
The LdmoST Plastic family
Features
■ Excellent thermal stability
■ Common source configuration
■ Broadband performances P
OUT
= 8W with 15
dB gain @ 500MHz
■ New leadless plastic package
■ EDS protection
■ Supplied in tape & reel of 3K units
■ In compliance with the 2002/93/EC european
directive
Description
The PD54008L-E is a common source
N-Channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broad band commercial and industrial
applications. It operates at 7 V in common source
mode at frequencies of up to 1 GHz. PD54008L-E
boasts the excellent gain, linearity and reliability
of STH1LV latest LDMOS technology mounted in
the innovative leadless SMD plastic package,
PowerFLAT™.
PD54008L-E’s superior linearity performance
makes it an ideal solution for portable radio.
Pin connection
PowerFLAT™ (5x5)
Top view
www.st.com
Order codes
Part Number Marking Package Packaging
PD54008L-E 54008 PowerFLAT (5x5) Tape & Reel
PD54008L-E
2/15
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Impedances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Typical performance (Broadband) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Test circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PD54008L-E Electrical data
3/15
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 1. Absolute maximum ratings (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain source voltage 25 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 5 A
P
DISS
Power dissipation (t
CASE
= 70°C)
26.7 W
T
J
Maximum operating junction temperature 150 °C
T
STG
Storage temperature -65 to +150 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction to case thermal resistance 3 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15

PD54008L-E

Mfr. #:
Buy PD54008L-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors POWER RF Transistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet