N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=10Ω
* Low threshold
APPLICATIONS
* Telephone handsets
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
200 V
Continuous Drain Current at T
amb
=25°C I
D
180 mA
Pulsed Drain Current I
DM
2A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
200 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.5 1.5 V ID=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
10
100
µA
µA
V
DS
=200 V, V
GS
=0
V
DS
=160 V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
500 mA V
DS
=25 V, V
GS
=5V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
10
10
Ω
Ω
V
GS
=5V,I
D
=250mA
V
GS
=3V, I
D
=125mA
Forward Transconductance
(1)(2)
g
fs
200 mS V
DS
=25V,I
D
=250mA
Input Capacitance (2) C
iss
85 pF
Common Source Output
Capacitance (2)
C
oss
20 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈25V, I
D
=250mA
Rise Time (2)(3) t
r
8ns
Turn-Off Delay Time (2)(3) t
d(off)
20 ns
Fall Time (2)(3) t
f
12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVNL120A
3-401
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
en
t (Amp
s
)
Saturation Characteristics
I
D(
O
n
)
Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
0 5 10 15 20 25 30 35 40 45 50
4V
3V
VGS=
1.6
1.2
0.4
0
0.8
1.4
1.0
0.6
0.2
10V
4V
3V
VGS=
0.6
0
0.2
0.4
0.8
0246810
1.0
8V
5V
2V
2V
8V
6V
VGS-Gate Source Voltage (Volts)
300
0
100
200
400
12345678910
500
VDS=25V
Transconductance v gate-source voltage
g
fs
-T
ransconductance (mS)
Transconductance v drain current
ID- Drain Current (Amps)
g
fs
-
T
r
an
sc
o
n
ducta
n
c
e
(
mS
)
0
0.2
0.4
0.6 0.8 1.0
0
100
200
400
300
500
1.2
1.4
1.6 1.8 2.0
VDS=25V
10V
6V
Transfer Characteristics
I
D(
O
n
)
Dr
a
i
n
C
u
r
r
e
nt (
Amps
)
V
GS-
Gate Source
Voltage (Volts)
012345678910
VDS=
40V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
20V
10V
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Capa
c
ita
n
c
e
(
p
F
)
Coss
Ciss
Crss
0
10 20
30
40 50
60
40
20
80
100
ZVNL120A
3-402
