HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 46 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG µ transponder IC
17. Limiting values
[1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
[2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
18. Characteristics
[1] Typical ratings are not guaranteed. Values are at 25 C.
[2] Measured with an HP4285A LCR meter at 125 kHz/room temperature (25C); V
IN1-IN2
= 0.5 V (RMS)
[3] Integrated Resonance Capacitor: 210pF 3%
[4] Integrated Resonance Capacitor: 280pF 5%
Table 48. Limiting values
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
stg
storage temperature 55 +125 C
V
ESD
electrostatic discharge voltage JEDEC JESD 22-A114-AB
Human Body Model
2- kV
I
i(max)
maximum input current IN1-IN2 20 mA
Tj junction temperature 40 +85 C
Table 49. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
f
oper
operating frequency 100 125 150 kHz
V
I
input voltage IN1-IN2 456V
I
I
input current IN1-IN2 - - 10 mA
C
i
input capacitance between IN1-IN2
HTMS1x01
[2][3]
203.7 210 216.3 pF
HTMS8x01
[2][4]
266 280 294 pF
