HTMS1x01_8x01 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.4 — 21 May 2015
152934 8 of 57
NXP Semiconductors
HTMS1x01; HTMS8x01
HITAG µ transponder IC
8. Mechanical specification
8.1 Wafer specification
See Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.
Table 4. Wafer specification
Wafer
Designation
each wafer is scribed with batch number and wafer
number
Diameter 200 mm (8 inches)
Thickness
150 m ± 15 m
Process CMOS 0.14 m
Batch size
25 wafers
PGDW 91981
Wafer backside
Material Si
Treatment ground and stress release
Roughness
R
a
max. 0.5 m, R
t
max. 5 m
Chip dimensions
Die size without scribe
550 m x 550 m = 302500 m
2
Scribe line width
X-dimension 15 m (scribe line width measured between nitride edges)
Y-dimension 15 m (scribe line width measured between nitride edges)
Number of pads 5
Passivation on front
Type sandwich structure
Material PE-nitride (on top)
Thickness 1.75 m total thickness of passivation
Au bump
Material >99.9 % pure Au
Hardness 35 HV to 80 HV 0.005
Shear strength >70 MPa
Height 18 m
Height uniformity
within a die 2 m
within a wafer 3 m
wafer to wafer 4 m
Bump flatness 1.5 m
Bump size
LA, LB
294 m 164 m
TEST, GND, VDD 60 m 60 m
variation 5 m
Under bump metallization sputtered TiW
