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UG15HTHE3/45

P1-P3P4-P5
UG15xT, UGF15xT, UGB15xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
1
Document Number: 88828
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AC and ITO-220AC package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high voltage, high frequency power factor
correctors, switching mode power supplies, freewheeling
diodes and secondary DC/DC rectification application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
RRM
500 V to 600 V
I
FSM
135 A
t
rr
35 ns
V
F
at I
F
1.5 V
T
J
max. 150 °C
Package
TO-220AC, ITO-220AC,
TO-263AB
Diode variations Single die
CASE
PIN 2
PIN 1
TO-220AC
UG15xT
ITO-220AC
UGF15xT
UGB15xT
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
PIN 2
PIN 1
TO-263AB
1
2
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG15HT UG15JT UNIT
Max. repetitive peak reverse voltage V
RRM
500 600 V
Max. working reverse voltage V
RWM
400 480 V
Max. RMS voltage V
RMS
350 420 V
Max. DC blocking voltage V
DC
500 600 V
Max. average forward rectified current (fig. 1) I
F(AV)
15 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
135 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
V
AC
1500 V
UG15xT, UGF15xT, UGB15xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
2
Document Number: 88828
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG15HT UG15JT UNIT
Max. instantaneous forward voltage I
F
= 15 A
T
J
= 25 °C
V
F
1.75
V
T
J
= 125 °C 1.50
Max. DC reverse current at V
RWM
T
J
= 25 °C
I
R
30 μA
T
J
= 125 °C 4.0 mA
Max. reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
35 ns
Max. reverse recovery time
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
t
rr
50 ns
Typical softness factor (t
b
/t
a
)
I
F
= 15 A, dI/dt = 240 A/μs,
V
R
= 400 V, I
rr
= 0.1 I
RM
S 0.9 -
Max. reverse recovery current
I
F
= 15 A, dI/dt = 120 A/μs,
V
R
= 400 V, T
C
= 125 °C
I
RM
9.0 A
Peak forward recovery time
I
F
= 15 A, dI/dt = 120 A/μs,
V
F
= 1.1 x V
F
max.
t
fr
500 ns
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG15 UGF15 UGB15 UNIT
Typical thermal resistance from junction to case R
JC
1.5 3.0 1.5 °C/W
ORDERING INFORMATIONS (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC UG15JT-E3/45 1.85 45 50/tube Tube
ITO-220AC UGF15JT-E3/45 1.98 45 50/tube Tube
TO-263AB UGB15JT-E3/45 1.35 45 50/tube Tube
TO-263AB UGB15JT-E3/81 1.35 81 800/reel Tape and reel
TO-220AC UG15JTHE3/45
(1)
1.85 45 50/tube Tube
ITO-220AC UGF15JTHE3/45
(1)
1.98 45 50/tube Tube
TO-263AB UGB15JTHE3/45
(1)
1.35 45 50/tube Tube
TO-263AB UGB15JTHE3/81
(1)
1.35 81 800/reel Tape and reel
UG15xT, UGF15xT, UGB15xT
www.vishay.com
Vishay General Semiconductor
Revision: 24-Feb-16
3
Document Number: 88828
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Reverse Switching Characteristics
25 50 75 100 125 150 175
16
14
12
10
8
6
4
2
0
Average Forward Current (A)
Case Temperature (°C)
UG15JT, UGB15JT
UGF15JT
1 10 100
Number of Cycles at 60 Hz
160
140
120
100
80
60
40
20
0
Peak Forward Surge Current (A)
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
100
10
1
0.1
0.01
0.1 0.5 0.9 1.3 1.7 2.1
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
10 000
1000
100
10
1
0 20406080100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1 1 10 100
1000
100
10
1
Reverse Voltage (V)
Junction Capacitance (pF)
t
rr
Q
rr
Stored Charge/Recovery Time (nC/ns)
450
400
350
300
250
200
150
100
50
0
25 50 75 100 125
Junction Temperature (°C)
15 A, 240 A/µs, 400 V
15 A, 240 A/µs, 400 V
1 A, 50 A/µs, 30 V
15 A, 120 A/µs, 400 V
P1-P3P4-P5

UG15HTHE3/45

Mfr. #:
Buy UG15HTHE3/45
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-15ETH06HN3
Lifecycle:
New from this manufacturer.
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