Features
Floating channel designed for bootstrap operation
Fully operational to +500V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 to 18V
Undervoltage lockout
Current detection and limiting loop to limit driven
power transistor current
Error lead indicates fault conditions and programs
shutdown time
Output in phase with input
2.5V, 5V and 15V input logic compatible
Also available LEAD-Free
Description
The IR2125(S) is a high voltage, high speed power
MOSFET and IGBT driver with over-current limiting
protection circuitry. Proprietary HVIC and latch im-
mune CMOS technologies enable ruggedized mono-
lithic construction. Logic inputs are compatible with
standard CMOS or LSTTL outputs, down to 2.5V
logic. The output driver features a high pulse current
CURRENT LIMITING SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
500V max.
I
O
+/- 1A / 2A
V
OUT
12 - 18V
V
CSth
230 mV
t
on/off
(typ.) 150 & 150 ns
Packages
Typical Connection
buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the
driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external
capacitor which directly controls the time interval between detection of the over-current limiting conditions and
latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high
or low side configuration which operates up to 500 volts.
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IR2125
(
S
) & (PbF)
Data Sheet No. PD60017 Rev.Q
www.irf.com 1
(Refer to Lead Assignments
for correct pin configura-
tion). This/These diagram(s)
show electrical connections
only. Please refer to our
Application Notes and
DesignTips for proper circuit
board layout.
8-Lead PDIP
16-Lead SOIC
(Wide Body)
IR2125
(
S
) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High Side Floating Supply Voltage -0.3 525
V
S
High Side Floating Offset Voltage V
B
- 25 V
B
+ 0.3
V
HO
High Side Floating Output Voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Logic Supply Voltage -0.3 25 V
V
IN
Logic Input Voltage -0.3 V
CC
+ 0.3
V
ERR
Error Signal Voltage -0.3 V
CC
+ 0.3
V
CS
Current Sense Voltage V
S
- 0.3 V
B
+ 0.3
dV
s
/dt Allowable Offset Supply Voltage Transient 50 V/ns
P
D
Package Power Dissipation @ T
A
+25°C (8 lead PDIP) 1.0
(16 lead SOIC) 1.25
Rth
JA
Thermal Resistance, Junction to Ambient (8 lead PDIP) 125
(16lLead SOIC) 100
T
J
Junction Temperature 150
T
S
Storage Temperature -55 150
T
L
Lead Temperature (Soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
High Side Floating Supply Voltage V
S
+ 12 V
S
+ 18
V
S
High Side Floating Offset Voltage Note 1 500
V
HO
High Side Floating Output Voltage V
S
V
B
V
CC
Logic Supply Voltage 0 18
V
IN
Logic Input Voltage 0 V
CC
V
ERR
Error Signal Voltage 0 V
CC
V
CS
Current Sense Signal Voltage V
S
V
B
T
A
Ambient Temperature -40 125 °C
Note 1: Logic operational for V
S
of -5 to +500V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
W
°C/W
°C
V
www.irf.com 3
IR2125
(
S
) & (PbF)
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” Input Voltage 14 2.2
V
IL
Logic “0” Input Voltage 15 0.8
V
CSTH+
CS Input Positive Going Threshold 16 150 230 320
V
CSTH-
CS Input Negative Going Threshold 17 130 210 300
V
OH
High Level Output Voltage, V
BIAS
- V
O
18 100 I
O
= 0A
V
OL
Low Level Output Voltage, V
O
19 100 I
O
= 0A
I
LK
Offset Supply Leakage Current 20 50 V
B
= V
S
= 500V
I
QBS
Quiescent V
BS
Supply Current 21 400 1000 V
IN
= V
CS
= 0V or 5V
I
QCC
Quiescent V
CC
Supply Current 22 700 1200 V
IN
= V
CS
= 0V or 5V
I
IN+
Logic “1” Input Bias Current 23 4.5 10 µAV
IN
= 5V
I
IN-
Logic “0” Input Bias Current 24 1.0 V
IN
= 0V
I
CS+
“High” CS Bias Current 25 4.5 10 V
CS
= 3V
I
CS-
“Low” CS Bias Current 26 1.0 V
CS
= 0V
V
BSUV+
V
BS
Supply Undervoltage Positive Going 27 8.5 9.2 10.0
Threshold
V
BSUV-
V
BS
Supply Undervoltage Negative Going 28 7.7 8.3 9.0
Threshold
V
CCUV+
V
CC
Supply Undervoltage Positive Going 29 8.3 8.9 9.6
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going 30 7.3 8.0 8.7
Threshold
I
ERR
ERR Timing Charge Current 31 65 100 130 V
IN
= 5V, V
CS
= 3V
ERR < V
ERR+
I
ERR+
ERR Pull-Up Current 32 8.0 15 V
IN
= 5V, V
CS
= 3V
ERR > V
ERR+
I
ERR-
ERR Pull-Down Current 33 16 30 V
IN
= 0V
I
O+
Output High Short Circuit Pulsed Current 34 1.0 1.6 V
O
= 0V, V
IN
= 5V
PW10 µs
I
O-
Output Low Short Circuit Pulsed Current 35 2.0 3.3 V
O
= 15V, V
IN
= 0V
PW10 µs
V
mV
mA
V
µA
A
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to V
S
.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 3300 pF and T
A
= 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figures 3 through 6.
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
t
on
Turn-On Propagation Delay 7 170 240 V
IN
= 0 & 5V
V
S
= 0 to 600V
t
off
Turn-Off Propagation Delay 8 200 270
t
sd
ERR Shutdown Propagation Delay 9 1.7 2.2 µs
t
r
Turn-On Rise Time 10 43 60
t
f
Turn-Off Fall Time 11 26 35
t
cs
CS Shutdown Propagation Delay 12 0.7 1.2
t
err
CS to ERR Pull-Up Propagation Delay 13 9.0 12 C
ERR
= 270 pF
ns
µs
ns

IR2125PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Gate Drivers 1 CURRENT LIMIT PRGM SHUTDOWN ERROR PIN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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