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BUK9K5R6-30EX

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BUK9K5R6-30E
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET
BUK9K5R6-30E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
Q
GD
gate-drain charge - 9.2 - nC
C
iss
input capacitance - 1860 2480 pF
C
oss
output capacitance - 391 469 pF
C
rss
reverse transfer
capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; Fig. 15
- 231 316 pF
t
d(on)
turn-on delay time - 13.8 - ns
t
r
rise time - 25.2 - ns
t
d(off)
turn-off delay time - 30.1 - ns
t
f
fall time
V
DS
= 24 V; R
L
= 2.4 Ω; V
GS
= 5 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
- 22.4 - ns
Source-drain diode FET1 and FET2
V
SD
source-drain voltage I
S
= 10 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 16 - 0.78 1.2 V
t
rr
reverse recovery time - 32.3 - ns
Q
r
recovered charge
I
S
= 10 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 15 V; T
j
= 25 °C
- 26.7 - nC
T
j
= 25 °C; t
p
= 300 μs
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NXP Semiconductors
BUK9K5R6-30E
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET
BUK9K5R6-30E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 7 / 13
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aah025
0
0.5
1
1.5
2
2.5
3
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
003aah026
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 1 2 3
V
GS
(V)
I
D
(A)
maxtypmin
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
T
j
= 25 °C; t
p
= 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
NXP Semiconductors
BUK9K5R6-30E
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET
BUK9K5R6-30E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 2 September 2015 8 / 13
003aaj812
0
0.4
0.8
1.2
1.6
2
-60 0 60 120 180
T
j
(°C)
a
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 13. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9K5R6-30EX

Mfr. #:
Buy BUK9K5R6-30EX
Manufacturer:
Nexperia
Description:
MOSFET MOSFET N-CH 30V 40A
Lifecycle:
New from this manufacturer.
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