TC74VHC14FK(EL,K) Datasheet TC74VHC14FK(EL,K) | P1-P3

TC74VHC14F/FT/FK

2014-03-01

1

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC74VHC14F, TC74VHC14FT, TC74VHC14FK

Hex Schmitt Inverter

The TC74VHC14 is an advanced high speed CMOS Schmitt

INVERTER fabricated with silicon gate C

2

MOS technology.

It achieves the high speed operation similar to equivalent

Bipolar Schottky TTL while maintaining the CMOS low power

dissipation.

Pin configuration and function are the same as the

TC74VHC04 but the inputs have hysteresis and with its schmitt

trigger function, the TC74VHC14 can be used as a line receivers

which will receive slow input signals.

An input protection circuit ensures that 0 to 5.5 V can be

applied to the input pins without regard to the supply voltage.

This device can be used to interface 5 V to 3 V systems and two

supply systems such as battery back up. This circuit prevents

device destruction due to mismatched supply and input voltages.

Features

• High speed: t

pd

= 5.5 ns (typ.) at V

CC

= 5 V

• Low power dissipation: I

CC

= 2 μA (max) at Ta = 25°C

• Power down protection is provided on all inputs.

• Balanced propagation delays: t

pLH

∼

−

t

pHL

• Wide operating voltage range: V

CC (opr)

= 2 V to 5.5 V

• Low noise: V

OLP

= 0.8 V (max)

• Pin and function compatible with 74ALS14

Weight

SOP14-P-300-1.27A : 0.18 g (typ.)

TSSOP14-P-0044-0.65A : 0.06 g (typ.)

VSSOP14-P-0030-0.50 : 0.02 g (typ.)

TC74VHC14F

TC74VHC14FT

TC74VHC14FK

Start of commercial production

1991-05

TC74VHC14F/FT/FK

2014-03-01

2

Pin Assignment IEC Logic Symbol

Truth Table

A Y

L H

H L

System Diagram, Waveform

Absolute Maximum Ratings (Note)

Characteristics Symbol Rating Unit

Supply voltage range V

CC

−0.5 to 7.0 V

DC input voltage V

IN

−0.5 to 7.0 V

DC output voltage V

OUT

−0.5 to V

CC

+ 0.5 V

Input diode current I

IK

−20 mA

Output diode current I

OK

±20 mA

DC output current I

OUT

±25 mA

DC V

CC

/ground current I

CC

±50 mA

Power dissipation P

D

180 mW

Storage temperature T

stg

−65 to 150 °C

Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or

even destruction.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

1A

2A

3A

4A

5A

6A

(1)

(3)

(5)

(9)

(11)

(13)

1Y

2Y

3Y

4Y

5Y

6Y

(2)

(4)

(6)

(8)

(10)

(12)

V

CC

9

6A

6Y

5A

8

14

13

12

11

10

1A

1

2

3

4

5

6

7

2Y

3A

3Y

GND

5Y

4A

4Y

(top view)

1Y

2A

V

N

V

H

Y

V

P

A

V

IN

(A)

V

OUT

(Y)

TC74VHC14F/FT/FK

2014-03-01

3

Operating Ranges (Note)

Characteristics Symbol Rating Unit

Supply voltage V

CC

2.0 to 5.5 V

Input voltage V

IN

0 to 5.5

V

Output voltage V

OUT

0 to V

CC

V

Operating temperature T

opr

−40 to 85 °C

Note: The operating ranges must be maintained to ensure the normal operation of the device.

Unused inputs must be tied to either V

CC

or GND.

Electrical Characteristics

DC Characteristics

Test Condition Ta = 25°C

Ta =

−40 to 85°C

Characteristics Symbol

V

CC

(V)

Min Typ. Max Min Max

Unit

Positive threshold

voltage

V

P

―

3.0

4.5

5.5

―

2.20

3.15

3.85

―

2.20

3.15

3.85

V

Negative threshold

voltage

V

N

―

3.0

4.5

5.5

0.90

1.35

1.65

―

0.90

1.35

1.65

―

V

Hysteresis voltage V

H

―

3.0

4.5

5.5

0.30

0.40

0.50

―

1.20

1.40

1.60

0.30

0.40

0.50

1.20

1.40

1.60

V

I

OH

= −50 μA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

―

1.9

2.9

4.4

―

High-level output

voltage

V

OH

V

IN

= V

IL

I

OH

= −4 mA

I

OH

= −8 mA

3.0

4.5

2.58

3.94

―

2.48

3.80

―

V

I

OL

= 50 μA

2.0

3.0

4.5

―

0.0

0.1

―

0.1

Low-level output

voltage

V

OL

V

IN

= V

IH

I

OL

= 4 mA

I

OL

= 8 mA

3.0

4.5

―

0.36

―

0.44

V

Input leakage

current

I

IN

V

IN

= 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA

Quiescent supply

current

I

CC

V

IN

= V

CC

or GND 5.5 ― ― 2.0 ― 20.0 μA

TC74VHC14FK(EL,K)

TC74VHC14FK(EL,K)

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