MT3S111P(TE12L,F) Datasheet MT3S111P(TE12L,F) | P1-P3

MT3S111P

2014-03-01 1

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type

MT3S111P

VHF-UHF Low-Noise, Low-Distortion Amplifier Applications

Features

• Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz)

• High Gain: |S

21e

|

2

=10.5 dB (typ.) (@f=1 GHz)

Marking

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage V

CES

13 V

Collector-emitter voltage V

CEO

6 V

Emitter-base voltage V

EBO

0.6 V

Collector-current I

C

100 mA

Base-current I

B

10 mA

Collector power dissipation P

C

300 mW

Collector power dissipation P

C

(Note 1) 1 W

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note 1: The device is mounted on a ceramic board (16 mm×16 mm×0.8 mm (t))

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

PW-Mini

JEDEC ⎯

JEITA SC-62

TOSHIBA 2-5K1A

Weight:0.05 g (typ.)

R 5

Start of commercial production

2007-11

MT3S111P

2014-03-01 2

Microwave Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Transition frequency f

T

V

CE

=5 V, I

C

=30 mA 6 8 ⎯ GHz

|S

21e

|

2

(1) V

CE

=5 V, I

C

=30 mA, f=500 MHz ⎯ 16 ⎯ dB

Insertion gain

|S

21e

|

2

(2) V

CE

=5 V, I

C

=30 mA, f=1 GHz 8.5 10.5 ⎯ dB

NF(1) V

CE

=5 V, I

C

=30 mA, f=500 MHz ⎯ 0.7 ⎯ dB

Noise figure

NF(2) V

CE

=5 V, I

C

=30 mA, f=1 GHz ⎯ 0.95 1.25 dB

3

rd

order intermodulation distortion output

intercept point

OIP

3

V

CE

=5 V, I

C

=30 mA, f=500 MHz,

⊿f=1 MHz

⎯ 32 ⎯ dBmW

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

=5 V, I

E

=0 A ⎯ ⎯ 0.1 µA

DC current gain h

FE

V

CE

=5 V, I

C

=30 mA 200 ⎯ 400 ⎯

Output capacitance C

ob

V

CB

=5 V, I

E

=0 A, f=1 MHz ⎯ 1.6 ⎯ pF

Reverse transfer capacitance C

re

V

CB

=5 V, I

E

=0 A, f=1 MHz (Note 2) ⎯ 1 1.3 pF

Note 2: C

re

is measured using a 3-terminal method with capacitance bridge.

Caution:

This device is sensitive to electrostatic discharge due to the high frequency transistor process of

f

T

=60 GHz class which is used for this product.

Please make tool and equipment earthed enough when you handle.

MT3S111P

2014-03-01 3

h

FE

-I

C

I

C

-V

BE

DC current gain h

FE

10

100

1000

1 10 100

COMMON EMITTER

VCE=5V

Ta=25°C

Collector-current I

C

(mA)

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1

COMMON EMITTER

VCE=5V

Ta= 25°C

Collector-current I

C

(mA)

Base-emitter voltage V

BE

(V)

I

C

-V

CE

f

T

-I

C

Collector-current I

C

(mA)

0

10

20

30

40

50

60

70

0123456

COMMON EMITTER

Ta=25°C

IB=

40μA

80μA

120μA

160μA

200μA

Transition frequency f

T

(GHz)

0

5

10

15

1 10 100

VCE=5V

Ta=25°C

Collector-emitter voltage V

CE

(V)

Collector-current I

C

(mA)

|S

21e

|

2

-I

C

NF-I

C

Insertion gain |S

21e

|

2

(dB)

0

2

4

6

8

10

12

14

16

18

1 10 100

VCE=5V

Ta=25°C

f = 1GHz

f = 500MHz

Noise figure NF(dB)

0.0

0.5

1.0

1.5

2.0

2.5

1 10 100

VCE=5V

Ta= 25°C

f = 500MHz

f = 1GHz

Collector-current I

C

(mA)

Collector-current I

C

(mA)

MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

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