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NTGS3441BT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1 Publication Order Number:
NTGS3441B/D
NTGS3441B
Power MOSFET
-20 V, -3.5 A, Single P-Channel, TSOP-6
Features
•Low R
DS(on)
in TSOP-6 Package
•2.5 V Gate Rating
•This is a Pb-Free Device
Applications
•Battery Switch and Load Management Applications in Portable
Equipment
•High Side Load Switch
•Portable Devices like Games and Cell Phones
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage V
DSS
-20 V
Gate-to-Source Voltage V
GS
$8 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
-3.0
A
T
A
= 70°C -2.4
t v 5 s T
A
= 25°C -3.5
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.1
W
t v 5 s 1.6
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
-2.2
A
T
A
= 70°C -1.8
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.7 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
-12 A
Operating Junction and Storage Temperature T
J
,
T
STG
-55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq).
3
4
1256
Device Package Shipping
†
ORDERING INFORMATION
P-Channel
TSOP-6
CASE 318G
STYLE 1
MARKING
DIAGRAM
SF = Device Code
M = Date Code
G = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
321
4
GateDrain
Source
56
Drain
DrainDrain
NTGS3441BT1G TSOP-6
(Pb-Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
-20 V
90 mW @ -4.5 V
130 mW @ -2.5 V
http://onsemi.com
SF MG
G
1
1
-3.0 A
-2.4 A
NTGS3441B
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction-to-Ambient – Steady State (Note 3)
R
q
JA
110
°C/W
Junction-to-Ambient – t v 5 s (Note 3)
R
q
JA
80
Junction-to-Ambient – Minimum Pad (Note 4)
R
q
JA
190
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= -250 mA
-20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= -20 V
T
J
= 25°C -1.0
mA
T
J
= 70°C -5.0
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8 V $0.1
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250 mA
-0.4 -0.9 V
Drain-to-Source On Resistance R
DS(on)
V
GS
= -4.5 V, I
D
= -3.0 A
59 90
mW
V
GS
= -2.5 V, I
D
= -2.4 A
79 130
Forward Transconductance g
FS
V
DS
= -10 V, I
D
= -3.0 A 5.8 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= -10 V
630
pF
Output Capacitance C
OSS
93
Reverse Transfer Capacitance C
RSS
49
Total Gate Charge Q
G(TOT)
V
GS
= -4.5 V, V
DS
= -10 V;
I
D
= -3.0 A
6.1 9.0
nC
Threshold Gate Charge Q
G(TH)
0.5
Gate-to-Source Charge Q
GS
1.0
Gate-to-Drain Charge Q
GD
1.4
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= -4.5 V, V
DS
= -10 V,
I
D
= -1.0 A, R
G
= 6.0 W
8.0 13
ns
Rise Time t
r
6.0 10
Turn-Off Delay Time t
d(OFF)
40 64
Fall Time t
f
33 53
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= -1.6 A
T
J
= 25°C -0.8 -1.2 V
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/d
t
= 100 A/ms,
I
S
= -1.6 A
12 24 ns
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
NTGS3441B
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
20
4
16
12
532
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D,
DRAIN CURRENT (AMPS)
8
4
0
1
Figure 1. On-Region Characteristics
0.5
20
16
1.51
12
4
0
2 2.5
Figure 2. Transfer Characteristics
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.5 3
0.12
2.5 4
0.30
0.00
5
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
-I
D,
DRAIN CURRENT (AMPS)
0201612
0.18
0.12
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
-I
D,
DRAIN CURRENT (AMPS)
-50 0-25 25
1.4
1.2
1.0
0.8
0.7
50 125100
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
V
GS
= -4.5 V
-2.5 V
-2 V
-1.5 V
-3.5 V
2 3.5
T
J
= 25°C
T
J
= 125°C
T
J
= -55°C
I
D
= -3 A
T
J
= 25°C
V
DS
= -5 V
0.30
0.00
75 150
T
J
= 25°C
V
GS
= -2.5 V
V
GS
= -4.5 V
I
D
= -3 A
V
GS
= -4.5 V
R
DS(on),
DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
R
DS(on),
DRAIN-TO-SOURCE RESISTANCE (W)
Figure 6. Capacitance Variation
1
0.06
84
1.5
1.3
1.1
0.9
482010
600
400
200
0
20
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
oss
C
iss
C
rss
4.5
0.06
0.18
0.24
0.24
1000
800
6
-3 V
-4 V
8
3
12 14 16 18
P1-P3P4-P6

NTGS3441BT1G

Mfr. #:
Buy NTGS3441BT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -3.5A SGL P-CHN TSOP-6
Lifecycle:
New from this manufacturer.
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