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STPSC406D

P1-P3P4-P6P7-P8
This is information on a product in full production.
August 2015 DocID16283 Rev 2 1/8
STPSC406
600 V power Schottky silicon carbide diode
Datasheet
-
production data
Features
• No or negligible reverse recovery
• Switching behavior independent of
temperature
• Dedicated to PFC boost diode
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
K
K
A
K
A
NC
TO-220AC
STPSC406D
DPAK
STPSC406B
Table 1. Device summary
I
F(AV)
4 A
V
RRM
600 V
T
j (max)
175 °C
Q
C (typ)
3 nC
www.st.com
Characteristics STPSC406
2/8 DocID16283 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.20x I
F(AV)
+ 0.3 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 600
V
I
F(RMS)
Forward rms current 11
A
I
F(AV)
Average forward
current
DPAK, T
c
= 110 °C, δ = 0.5
4
A
TO-220AC, T
c
= 95 °C, δ = 0.5
I
FSM
Surge non repetitive
forward current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
14
10
40
A
I
FRM
Repetitive peak forward
current
DPAK, T
c
= 115 °C, T
j
= 150 °C, δ = 0.1
14
A
TO-220AC, T
c
= 105 °C, T
j
= 150 °C, δ = 0.1
T
stg
Storage temperature range -55 to +175 °C
T
j
Operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-40 to +175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
T0-220AC 5.5
°C/W
DPAK 4.5
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. t
p
= 10 ms, δ < 2%
Reverse leakage
current
T
j
= 25 °C
V
R
= V
RRM
-1050
µA
T
j
= 150 °C - 60 500
V
F
(2)
2. t
p
= 500 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 4 A
-1.551.9
V
T
j
= 150 °C - 1.9 2.4
dPtot
dTj
<
1
Rth(j-a)
DocID16283 Rev 2 3/8
STPSC406 Characteristics
8
Table 5. Other parameters
Symbol Parameter Test conditions Typ. Unit
Q
c
Total capacitive charge
V
r
= 400 V, I
F
= 4 A dI
F
/dt = -200 A/µs
T
j
= 150 °C
3nC
C Total capacitance
V
r
= 0 V, T
c
= 25 °C, F = 1 Mhz 200
pF
V
r
= 400 V, T
c
= 25 °C, F = 1 Mhz 20
Figure 1. Forward voltage drop versus forward
current (typical values)
Figure 2. Reverse leakage current versus
reverse voltage applied
(maximum values)
I
FM
(A)
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
j
=150 °CT
j
=150 °C
T
j
=175 °CT
j
=175 °C
T
j
=25 °CT
j
=25 °C
V
FM
(V)
I
R
(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
0 50 100 150 200 250 300 350 400 450 500 550 600
T
j
=25 °CT
j
=25 °C
T
j
=150 °CT
j
=150 °C
T
j
=175 °CT
j
=175 °C
V
R
(V)
Figure 3. Peak forward current versus case
temperature (TO-220AC)
Figure 4. Peak forward current versus case
temperature (DPAK)
I
M
(A)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150 175
T
δ
=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
d=0.7δ=0.7
T
C
(°C)
I
M
(A)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150 175
T
δ
=tp/T
tp
δ=0.1
δ=0.3
δ=0.5
d=1δ=1
d=0.7δ=0.7
T
C
(°C)
P1-P3P4-P6P7-P8

STPSC406D

Mfr. #:
Buy STPSC406D
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 600 V Power Schottky Diode
Lifecycle:
New from this manufacturer.
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