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TEMT7100X01

P1-P3P4-P6P7-P7
TEMT7100X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
1
Document Number: 81770
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon Phototransistor in 0805 Package
DESCRIPTION
TEMT7100X01 is a silicon NPN epitaxial planar
phototransistor with daylight blocking filter in a miniature,
black 0805 package for surface mounting. Filter bandwidth
is matched with 830 nm to 950 nm IR emitters.
FEATURES
• Package type: surface mount
• Package form: 0805
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• AEC-Q101 qualified
• High photo sensitivity
• Daylight blocking filter matches with 830 nm
to 950 nm IR emitters
• Angle of half sensitivity: ϕ = ± 60°
• Package matched with IR emitter series
VSMB1940X01
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
•Counters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
20043-1
PRODUCT SUMMARY
COMPONENT I
caE
(μA) ϕ (deg) λ
0.5
(nm)
TEMT7100X01 225 to 675 ± 60 750 to 1010
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TEMT7100X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
20 V
Emitter collector voltage V
ECO
7V
Collector current I
C
20 mA
Power power dissipation T
amb
≤ 55 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
270 K/W
TEMT7100X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
2
Document Number: 81770
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance
0
20
40
60
80
100
120
0 102030405060708090100
21331
R
thJA
= 270 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
20 V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
25 pF
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
I
CA
225 450 675 μA
Angle of half sensitivity ϕ ± 60 deg
Wavelength of peak sensitivity λ
p
870 nm
Range of spectral bandwidth λ
0.5
750 to 1010 nm
Collector emitter saturation voltage I
C
= 0.05 mA V
CEsat
0.4 V
Temperature coefficient of I
ca
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
Tk
Ica
1.1 %/K
1
10
100
1000
10 000
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
I
CE0
- Collector Dark Current (nA)
I
F
= 0
V
CE
= 70 V
V
CE
= 25 V
V
CE
= 5 V
20594
0.001
0.01
0.1
1
10
0.01 0.1 1 10
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
21551
V
CE
= 5 V
TEMT7100X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 18-Oct-11
3
Document Number: 81770
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
0
10
20
30
40
50
60
70
80
90
100
0 250 500 750 1000 1250 1500 1750 2000
I
C
- Collector Current (µA)
t
r
/t
f
- Rise/Fall Time (µs)
t
f
t
r
20599
R
L
= 100 Ω
0
0.2
0.4
0.6
0.8
1.0
1.2
600 700 800 900 1000 1100
21552
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 0
I
e, rel
- Relative Radiant Sensitivity
94 8013
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
P1-P3P4-P6P7-P7

TEMT7100X01

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Buy TEMT7100X01
Manufacturer:
Vishay Semiconductors
Description:
Phototransistors Phototransistr 870nm
Lifecycle:
New from this manufacturer.
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