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BTS409L1 E3062A

P1-P3P4-P6P7-P9P10-P12P13-P13
BTS409L1
Data Sheet 7 2013-10-10
Truth Table
Input-
Output
Status
level
level
Normal
operation
L
H
L
H
H
H
Open load
L
H
13
)
H
H (L
14)
)
L
Short circuit
to V
bb
L
H
H
H
L
15)
H (L
16)
)
Overtem-
perature
L
H
L
L
H
L
Under-
voltage
L
H
L
L
H
H
Overvoltage
L
H
L
L
H
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
13
)
Power Transistor off, high impedance
14
)
with external resistor between pin 3 and pin 5
15
)
An external short of output to V
bb
, in the off state, causes an internal current from output to ground. If R
GND
is used, an offset voltage at the GND and ST pins will occur and the V
ST low
signal may be errorious.
16
)
Low resistance to V
bb
may be detected in ON-state by the no-load-detection
Terms
PROFET
V
IN
ST
OUT
GND
bb
V
ST
V
IN
I
ST
I
IN
V
bb
I
bb
I
L
V
OUT
I
GND
V
ON
1
2
4
3
5
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
ST(ON)
< 380 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
+ V
bb
OUT
GND
PROFET
V
Z
V
ON
V
ON
clamped to 47 V typ.
BTS409L1
Data Sheet 8 2013-10-10
Overvolt. and reverse batt. protection
+ V
bb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
V
Z2
I
R
V
Z1
V
Z1
= 6.2 V typ., V
Z2
= 47 V typ., R
GND
= 150 ,
R
ST
= 15 k, R
I
= 3.5 k typ.
Open-load detection
ON-state diagnostic condition: V
ON
< R
ON
* I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ V
bb
OUT
ON
V
ON
OFF-state diagnostic condition: V
OUT
> 3 V typ.; IN low
Open load
detection
Logic
unit
V
OUT
Signal GND
R
EXT
R
O
OFF
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
IN
V
ST
V
GND
Any kind of load. In case of Input=high is V
OUT
V
IN
- V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
V
GND
V
IN
V
ST
Any kind of load. If V
GND
> V
IN
- V
IN(T+)
device stays off
Due to V
GND
>0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
V
bb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
BTS409L1
Data Sheet 9 2013-10-10
V
bb
disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
V
bb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
E
AS
bb
L
R
E
Load
L
R
L
{Z
L
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
0 :
E
AS
=
I
L
· L
2·R
L
·(V
bb
+ |V
OUT(CL)
|)· ln (1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
L = f (I
L
); T
j,start
= 150°C,T
C
= 150°C const.,
V
bb
= 12 V, R
L
= 0
L [mH]
1
10
100
1000
10000
1 2 3 4 5
I
L
[A]
Transient thermal impedance chip case
Z
thJC
= f(t
p
)Z
thJC
[K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
t
p
[s]
P1-P3P4-P6P7-P9P10-P12P13-P13

BTS409L1 E3062A

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Manufacturer:
Infineon Technologies
Description:
IC SWITCH SMART HISIDE TO220AB-5
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