STN690A

P1-P3 P4-P6 P7-P9

February 2009 Rev 2 1/9

9

STN690A

High performance low voltage NPN transistor

Features

■ Very low collector to emitter saturation voltage

■ DC current gain, h

FE

> 100

■ 3 A continuous collector current

■ 40 V breakdown voltage V

(BR)CER

■

SOT-223 plastic package for surface mounting

circuits in tape and reel packaging

Applications

■ Power management in portable equipment

■ Voltage regulation in bias supply circuits

■ Switching regulator in battery charger

applications

■ Heavy load driver

Description

The device in manufactured in low voltage NPN

planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high

gain performance coupled with very low

saturation voltage.

Figure 1. Internal schematic diagram

1

2

4

3

SOT-223

Table 1. Device summary

Order code Marking Package Packaging

STN690A N690A SOT-223 Tape and reel

ww w.st.com

Obsolete Product(s) - Obsolete Product(s)

Electrical ratings STN690A

2/9

1 Electrical ratings

Table 3. Thermal data

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CBO

Collector-base voltage (I

E

= 0) 40 V

V

CER

Collector-emitter voltage (R

BE

= 47 Ω)

40 V

V

CEO

Collector-emitter voltage (I

B

= 0) 30 V

V

EBO

Emitter-base voltage (I

C

= 0) 5 V

I

C

Collector current 3 A

I

CM

Collector peak current (t

P

< 5 ms) 6 A

P

tot

Total dissipation at T

amb

= 25 °C 1.6 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Symbol Parameter Value Unit

R

thj-amb

Thermal resistance junction-amb

(1)

_ max

1. Device mounted on PCB area of 1 cm

2

.

78 °C/W

Obsolete Product(s) - Obsolete Product(s)

STN690A Electrical characteristics

3/9

2 Electrical characteristics

(T

case

= 25 °C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

= 0)

V

CB

= 30 V

V

CB

= 30 V; T

C

= 100 °C

10

100

µA

µA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 4 V

10 µA

V

(BR)CEO

(1)

Collector-emitter

breakdown voltage

(I

B

= 0)

I

C

= 10 mA

30 V

V

(BR)CER

(1)

Collector-emitter

breakdown voltage

(R

BE

= 47 Ω)

I

C

= 10 mA

40 V

V

(BR)CBO

Collector-base

breakdown voltage

(I

E

= 0)

I

C

= 100 µA

40 V

V

(BR)EBO

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 100 µA

5V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 0.5 A I

B

= 5 mA

I

C

= 1.2 A I

B

= 20 mA

I

C

= 2 A I

B

= 20 mA

I

C

= 3 A I

B

= 100 mA

I

C

= 3 A I

B

= 100 mA

T

C

= 100 °C

0.08

0.1

0.175

0.2

0.3

0.15

0.22

0.35

0.4

V

V

V

V

V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 1 A I

B

= 10 mA

0.8 1 V

V

BE(on)

(1)

Base-emitter on voltage

I

C

= 1 A V

CE

= 2 V

0.8 1 V

h

FE

(1)

DC current gain

I

C

= 10 mA V

CE

= 2 V

I

C

= 500 mA V

CE

= 2 V

I

C

= 1 A V

CE

= 2 V

I

C

= 2 A V

CE

= 1 V

I

C

= 3 A V

CE

= 1 V

100

100

100

100

90

200

200

160

130

400

400

Obsolete Product(s) - Obsolete Product(s)

P1-P3 P4-P6 P7-P9

STN690A

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

TRANS NPN 30V 3A SOT223

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

STN690A