LXA08T600C
Qspeed
™
Family
600 V, 8 A X-Series Common-Cathode Diode
www.powerint.com November 2013
Product Summary
I
F(AVG)
per diode 4 A
V
RRM
600 V
Q
RR
(Typ at 125 °C) 50 nC
I
RRM
(Typ at 125 °C) 2.6 A
Softness t
b
/t
a
(Typ at 125 °C) 0.8
TO-220AB
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
General Description
This device has the lowest Q
RR
of any 600 V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC inverters
Features
Low Q
RR
, Low I
RRM
, Low t
RR
High dI
F
/dt capable (1000 A/µs)
Soft recovery
Benefits
Increases efficiency
Eliminates need for snubber circuits
Reduces EMI filter component size & count
Enables extremely fast switching
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage 600 V
I
F(AVG)
Average forward current Per Diode, T
J
= 150 °C, T
C
= 127°C 4 A
Per Device, T
J
= 150 °C, T
C
= 127°C 8 A
I
FSM
Non-repetitive peak surge current 60 Hz, ½ cycle 30 A
I
FSM
Non-repetitive peak surge current ½ cycle of t = 28 μs Sinusoid, T
C
= 25 °C 350 A
T
J
Maximum junction temperature 150 °C
T
STG
Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C
Thermal Resistance
Symbol Resistance from: Conditions Rating Units
R
JA
Junction to ambient TO-220AB 62 °C/W
R
JC
Junction to case
Per Diode 2.4 °C/W
Per Device 1.2 °C/W
Pin Assignment
A1
K
A2
A1
K
A2