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SD500N30PSC

P1-P3P4-P6P7-P7
SD500N/R SERIES
STANDARD RECOVERY DIODES
Stud Version
475A
Bulletin I2095 rev. B 09/06
Features
Wide current range
High voltage ratings up to 4500V
High surge current capabilities
Stud cathode and stud anode version
Standard JEDEC types
RoHS Compliant
Typical Applications
Converters
Power supplies
High power drives
Auxiliary system supplies for traction applications
Major Ratings and Characteristics
I
F(AV)
475 A
@ T
C
55 °C
I
F(RMS)
745 A
I
FSM
@
50Hz 7500 A
@ 60Hz 7850 A
I
2
t@
50Hz 281 KA
2
s
@ 60Hz 257 KA
2
s
V
RRM
range 3000 to 4500 V
T
J
- 40 to 150 °C
Parameters SD500N/R Units
case style
B-8
1
www.irf.com
SD500N/R Series
Bulletin I2095 rev. B 09/06
2 www.irf.com
Voltage V
RRM
, maximum repetitive V
RSM
, maximum non- I
RRM
max.
Type number Code peak reverse voltage repetitive peak rev. voltage
@ T
J
= T
J
max.
VVmA
30 3000 3100
36 3600 3700
40 4000 4100
45 4500 4600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD500N/R 50
Forward Conduction
I
F(AV)
Max. average forward current 475 A 180° conduction, half sine wave
@ Case temperature 55 °C
I
F(AV)
Max. average forward current 300 A 180° conduction, half sine wave
@ Case temperature 100 °C
I
F(RMS)
Max. RMS forward current 745 A DC @ 40°C case temperature
I
FSM
Max. peak, one-cycle forward, 7500 t = 10ms No voltage
non-repetitive surge current 7850 t = 8.3ms reapplied
6310 t = 10ms 50% V
RRM
6600 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I
2
t for fusing 281 t = 10ms No voltage Initial T
J
= T
J
max.
257 t = 8.3ms reapplied
199 t = 10ms 50% V
RRM
182 t = 8.3ms reapplied
I
2
√t Maximum I
2
√t for fusing 2810 KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f
1
Low level value of forward
slope resistance
r
f
2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop 1.66 V I
pk
= 1000A, T
J
= T
J
max, t
p
= 10ms sinusoidal wave
Parameter SD500N/R Units Conditions
0.72 (I > π x I
F(AV)
),T
J
= T
J
max.
0.78 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
max.
mΩ
0.97 (I > π x I
F(AV)
),T
J
= T
J
max.
0.88 (16.7% x π x I
F(AV)
< I < π x I
F(AV)
), T
J
= T
J
max.
V
KA
2
s
A
SD500N/R Series
Bulletin I2095 rev. B 09/06
3www.irf.com
T
J
Max. junction operating temperature range -40 to 150
T
stg
Max. storage temperature range -55 to 200
R
thJC
Max. thermal resistance, junction to case 0.1 DC operation
R
thCS
Max. thermal resistance, case Mounting surface, smooth, flat and
to heatsink greased
T Max. allowed mounting torque ±10% 50 Nm Not lubricated threads
wt Approximate weight 454 g
Case style B - 8 See Outline Table
°C
0.04
Parameter SD500N/R Units Conditions
K/W
Thermal and Mechanical Specifications
ΔR
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180° 0.012 0.008 T
J
= T
J
max.
120° 0.014 0.014
90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
K/W
Ordering Information Table
1 2
3
4 5
6
Device Code
SD 50 0 N 45 P S C
8
7
1 - Diode
2 - Essential part number
3 - 0 = Standard recovery
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 - Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6 - P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
7
- S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
T = Threaded Top Terminal 3/8" 24UNF-2A
None = Non isolated lead
8 - C = Ceramic Housing
NOTE: Available for rotating applications (Contact factory)
P1-P3P4-P6P7-P7

SD500N30PSC

Mfr. #:
Buy SD500N30PSC
Manufacturer:
Vishay
Description:
DIODE GEN PURP 3KV 475A B8
Lifecycle:
New from this manufacturer.
Delivery:
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