SIS435DNT-T1-GE3 Datasheet SIS435DNT-T1-GE3 | P1-P3

Vishay Siliconix

SiS435DNT

Document Number: 63264

S13-0465-Rev. A, 04-Mar-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

P-Channel 20-V (D-S) MOSFET

FEATURES

•

TrenchFET

®

Gen III P-Channel Power MOSFET

• Thin 0.8 mm max. height

• 100 % R

g

and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Smart Phones, Tablet PCs, and

Mobile Computing

- Battery Switch

- Load Switch

- Power Management

- Battery Management

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 81 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max.

I

D

(A)

a

Q

g

(Typ.)

- 20

0.0054 at V

GS

= - 4.5V

- 30

a

57 nC

0.0060 at V

GS

= - 3.7 V

- 30

a

0.0083 at V

GS

= - 2.5 V

- 30

a

0.0140 at V

GS

= - 1.8 V

- 30

a

Ordering Information:

SiS435DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.3 mm

33

Thin PowerPAK

®

1212-8

Bottom View

3.3 mm

0.8 mm

S

G

D

P-

C

hannel M

OS

FET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

- 20

V

Gate-Source Voltage V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 30

a

A

T

C

= 70 °C - 30

a

T

A

= 25 °C

- 22

b, c

T

A

= 70 °C

- 17

b, c

Pulsed Drain Current (t = 300 µs) I

DM

- 80

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 30

a

T

A

= 25 °C

- 3.1

b, c

Avalanche Current

L = 0.1 mH

I

AS

- 20

Single Pulse Avalanche Energy E

AS

20 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

39

W

T

C

= 70 °C 25

T

A

= 25 °C

3.7

b, c

T

A

= 70 °C

2.4

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  10 s R

thJA

24 33

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

2.4 3.2

www.vishay.com

2

Document Number: 63264

S13-0465-Rev. A, 04-Mar-13

Vishay Siliconix

SiS435DNT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 20 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 µA

- 16

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

2.9

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.4 - 0.9 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 20 V, V

GS

= 0 V

- 1

µA

V

DS

= - 20 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

- 5 V, V

GS

= - 4.5 V

- 20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 13 A

0.0044 0.0054



V

GS

= - 3.7 V, I

D

= - 10 A

0.0048 0.0060

V

GS

= - 2.5 V, I

D

= - 10 A

0.0065 0.0083

V

GS

= - 1.8 V, I

D

= - 5 A

0.0110 0.0140

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 13 A

55 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 10 V, V

GS

= 0 V, f = 1 MHz

5700

pFOutput Capacitance

C

oss

620

Reverse Transfer Capacitance

C

rss

585

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 8 V, I

D

= - 20 A

98 180

nC

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 20 A

57 86

Gate-Source Charge

Q

gs

7.4

Gate-Drain Charge

Q

gd

13.1

Gate Resistance

R

g

f = 1 MHz 0.8 3.8 7.6 

Tur n - O n D e l ay Time

t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 4.5 V, R

g

= 1 

40 80

ns

Rise Time

t

r

30 60

Turn-Off Delay Time

t

d(off)

100 200

Fall Time

t

f

30 60

Tur n - O n D e l ay T im e

t

d(on)

V

DD

= - 10 V, R

L

= 1 

I

D

 - 10 A, V

GEN

= - 8 V, R

g

= 1 

15 30

Rise Time

t

r

10 20

Turn-Off Delay Time

t

d(off)

110 220

Fall Time

t

f

25 50

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 30

A

Pulse Diode Forward Current

I

SM

- 80

Body Diode Voltage

V

SD

I

S

= - 10 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

19 40 ns

Body Diode Reverse Recovery Charge

Q

rr

10 20 nC

Reverse Recovery Fall Time

t

a

9

ns

Reverse Recovery Rise Time

t

b

10

Document Number: 63264

S13-0465-Rev. A, 04-Mar-13

www.vishay.com

3

Vishay Siliconix

SiS435DNT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

20

40

60

80

0.0 0.5 1.0 1.5 2.0

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 1.5 V

V

GS

= 5 V thru 2.5 V

V

GS

= 1 V

0.0000

0.0100

0.0200

0.0300

0.0400

0 20 40 60 80

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 3.7 V

V

GS

= 4.5 V

V

GS

= 1.8 V

V

GS

= 2.5 V

0

2

4

6

8

0 25 50 75 100

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 16 V

V

DS

= 5 V

V

DS

= 10 V

I

D

= 20 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0 0.3 0.6 0.9 1.2 1.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

2000

4000

6000

8000

0 5 10 15 20

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss, rss

C

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

V

GS

= 1.8 V

V

GS

= 2.5 V

I

D

= 13 A

V

GS

= 4.5 V, 3.7 V

SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

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