APT5010JVRU3 Datasheet APT5010JVRU3 | P1-P3

APT5010JVRU3

APT5010JVRU3 – Rev 2 October, 2012

www.microsemi.com

1

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8

ISOTOP



Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

A

S

G

D

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 500 V

T

c

= 25°C 44

I

D

Continuous Drain Current

T

c

= 80°C 33

I

DM

Pulsed Drain current 176

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 100

m

P

D

Maximum Power Dissipation T

c

= 25°C 450 W

I

AR

Avalanche current (repetitive and non repetitive) 44 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

IF

AV

Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C 30

IF

RMS

RMS Forward Current (Square wave, 50% duty) 39

A

V

DSS

= 500V

R

DSon

= 100m max @ Tj = 25°C

I

D

= 44A @ Tc = 25°C

Application

 AC and DC motor control

 Switched Mode Power Supplies

Features

 Power MOS V

®

MOSFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic diode

- Avalanche energy rated

- Very rugged

 ISOTOP

®

Package (SOT-227)

 Very low stray inductance

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Very rugged

 Low profile

 RoHS Compliant

ISOTOP

®

Buck chopper

MOSFET Power Module

A

D

G

S

APT5010JVRU3

APT5010JVRU3 – Rev 2 October, 2012

www.microsemi.com

2

–

8

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 500V

T

j

= 25°C 25

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 400V

T

j

= 125°C 250

µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 22A 100

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 2.5mA 2 4 V

I

GSS

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 7410

C

oss

Output Capacitance 1050

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

390

pF

Q

g

Total gate Charge 312

Q

gs

Gate – Source Charge 37

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 250V

I

D

= 44A @ T

J

=25°C

127

nC

T

d(on)

Turn-on Delay Time 18

T

r

Rise Time 16

T

d(off)

Turn-off Delay Time 54

T

f

Fall Time

V

GS

= 15V

V

Bus

= 250V

I

D

= 44A @ T

J

=25°C

R

G

= 0.6

5

ns

Chopper diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

F

= 30A 1.6 1.8

I

F

= 60A 1.9

V

F

Diode Forward Voltage

I

F

= 30A T

j

= 125°C 1.4

V

R

= 600V T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current

V

R

= 600V T

j

= 125°C 500

µA

C

T

Junction Capacitance V

R

= 200V 44 pF

Reverse Recovery Time

I

F

=1A,V

R

=30V

di/dt =100A/µs

T

j

= 25°C 23

T

j

= 25°C 85

t

rr

Reverse Recovery Time

T

j

= 125°C 160

ns

T

j

= 25°C 4

I

RRM

Maximum Reverse Recovery Current

T

j

= 125°C 8

A

T

j

= 25°C 130

Q

rr

Reverse Recovery Charge

I

F

= 30A

V

R

= 400V

di/dt =200A/µs

T

j

= 125°C 700

nC

t

rr

Reverse Recovery Time 70 ns

Q

rr

Reverse Recovery Charge 1300 nC

I

RRM

Maximum Reverse Recovery Current

I

F

= 30A

V

R

= 400V

di/dt =1000A/µs

T

j

= 125°C

30 A

APT5010JVRU3

APT5010JVRU3 – Rev 2 October, 2012

www.microsemi.com

3

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8

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

MOSFET 0.28

R

thJC

Junction to Case Thermal Resistance

Diode 1.21

R

thJA

Junction to Ambient (IGBT & Diode) 20

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

2500 V

T

J

,T

STG

Storage Temperature Range -55 150

T

L

Max Lead Temp for Soldering:0.063” from case for 10 sec 300

°C

Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m

Wt Package Weight 29.2 g

Typical MOSFET Performance Curve

APT5010JVRU3

APT5010JVRU3

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