Data Sheet ADP3330
Figure 16. Load Transient Response, C
L
= 10 µF
Figure 17. Short-Circuit Current
Figure 18. Turn On/Turn Off Response
Figure 19. Power Supply Ripple Rejection vs. Frequency
Figure 20. RMS Noise vs. C
L
(10 Hz to100 kHz)
Figure 21. Output Noise Density
0 1000800600400200
TIME (µs)
3.10
3.05
3.00
2.95
2.90
200
100
0
–100
V
IN
= 7V
V
OUT
= 3V
C
L
= 10µF
20mA
12098-016
OUTPUT VOLTAGE
(V)
LOAD CURRENT
(mA)
0 54321
TIME (Seconds)
3
0
500
400
300
200
100
0
–100
V
IN
= 7V
V
OUT
I
OUT
12098-017
OUTPUT VOLTAGE
(V)
LOAD CURRENT
(mA)
0 1000800600400200
V
OUT
(V)V
ERR
(V)V
SD
(V)
TIME (µs)
3
2
1
0
3
0
2
0
–2
V
IN
= 7V
V
OUT
= 3V
C
L
= 10µF
R
L
= 15Ω
12098-018
10 10M1M100k10k1k100
RIPPLE REJECTION (dB)
FREQUENCY (Hz)
0
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
V
OUT
= 3V
C
L
= 0.47µF
I
L
= 0.1mA
C
L
= 0.47µF
I
L
= 200mA
C
L
= 10µF
I
L
= 0.1mA
C
L
= 10µF
I
L
= 200mA
12098-019
0 5010 20 30 40
RMS NOISE (µV)
C
L
(µF)
160
0
20
40
60
80
100
120
140
I
L
= 200mA
I
L
= 0mA
I
L
= 200mA
WITH NOISE REDUCTION
I
L
= 0mA
WITH NOISE REDUCTION
12098-020
10 10M1M
100k10k1k100
VOLTAGE NOISE SPECTRAL DENSITY (µV√Hz)
FREQUENCY (Hz)
1
0.01
0.1
V
OUT
= 3V
I
L
= 200mA
C
L
= 0.47µF
C
NR
= 0
C
L
= 0.47µF
C
NR
= 10nF
C
L
= 10µF
C
NR
= 10nF
C
L
= 10µF
C
NR
= 0
12098-021
Rev. C | Page 9 of 16
ADP3330 Data Sheet
THEORY OF OPERATION
The anyCAP low dropout (LDO) ADP3330 uses a single control
loop for regulation and reference functions. The output voltage
is sensed by a resistive voltage divider consisting of R1 and R2,
which is varied to provide the available output voltage options.
Feedback is taken from this network by way of a series diode
(D1) and a second resistor divider (R3 and R4) to the input of
an amplifier.
Figure 22. Functional Block Diagram
A very high gain error amplifier is used to control this loop. The
amplifier is constructed in such a way that, at equilibrium, the
amplifier produces a large, temperature proportional input
offset voltage that is repeatable and very well controlled. The
temperature proportional offset voltage is combined with the
complementary diode voltage to form a virtual band gap
voltage, implicit in the network, although it never appears
explicitly in the circuit. Ultimately, this patented design makes it
possible to control the loop with only one amplifier. This
technique also improves the noise characteristics of the
amplifier by providing more flexibility on the trade-off of noise
sources that leads to a low noise design.
The R1, R2 divider is chosen in the same ratio as the band gap
voltage to the output voltage. Although the R1, R2 resistor
divider is loaded by the D1 diode and a second divider
consisting of R3 and R4, the values are chosen to produce a
temperature stable output. This unique arrangement specifically
corrects the loading of the divider so that the typical error
resulting from base current loading in conventional circuits is
avoided.
The patented amplifier controls a new and unique noninverting
driver that drives the pass transistor, Q1. The use of this
noninverting driver enables the frequency compensation to
include the load capacitor in a pole splitting arrangement to
achieve reduced sensitivity to the value, type, and ESR of the
load capacitance.
Most LDOs place strict requirements on the range of ESR values
for the output capacitor because they are difficult to stabilize,
due to the uncertainty of load capacitance and resistance.
Moreover, the ESR value required to keep conventional LDOs
stable changes depending on load and temperature. These ESR
limitations make designing with LDOs more difficult because of
their unclear specifications and extreme variations over
temperature.
The ADP3330 anyCAP LDO overcomes these limitations. It can
be used with virtually any good quality capacitor, with no
constraint on the minimum ESR. The innovative design allows
the circuit to be stable with just a small 0.47 µF capacitor on the
output. Additional advantages of the pole splitting scheme
include superior line noise rejection and very high regulator
gain, which leads to excellent line and load regulation. An
impressive ±1.4% accuracy is guaranteed over line, load and
temperature.
Additional features of the circuit include current limit, thermal
shutdown, and noise reduction. Compared to standard
solutions that give warning after the output has lost regulation,
the ADP3330 provides improved system performance by
enabling the
ERR
pin to give warning just before the device
loses regulation.
When the temperature of the chip rises to more than 165°C, the
circuit activates a soft thermal shutdown, indicated by a signal
low on the
ERR
pin, to reduce the current to a safe level.
PTAT
V
OS
g
m
NONINVERTING
WIDEBAND
DRIVER
INPUT
Q1
ADP3330
COMPENSATION
CAPACITOR
R1
D1
R2
R3
R4
OUTPUT
PTAT
CURRENT
R
LOAD
C
LOAD
(a)
GND
ATTENUATION
(V
BAND GAP
/V
OUT
)
12098-022
Rev. C | Page 10 of 16
Data Sheet ADP3330
APPLICATIONS INFORMATION
CAPACITOR SELECTION
Output Capacitors
As with any micropower device, output transient response is a
function of the output capacitance. The ADP3330 is stable with
a wide range of capacitor values, types, and ESR (anyCAP). A
capacitor as low as 0.47 µF is all that is needed for stability;
larger capacitors can be used if high output current surges are
anticipated. The ADP3330 is stable with extremely low ESR
capacitors (ESR 0), such as MLCC or OSCON. Note that the
effective capacitance of some capacitor types may fall less than
the minimum at cold temperature. Ensure that the capacitor
provides more than 0.47 µF at minimum temperature.
Input Bypass Capacitor
An input bypass capacitor is not strictly required, but it is
advisable in any application involving long input wires or high
source impedance. Connecting a 0.47 µF capacitor from IN to
GND reduces the sensitivity of the circuit to printed circuit
board (PCB) layout. If a larger value output capacitor is used, a
larger value input capacitor is also recommended.
NOISE REDUCTION
A noise reduction capacitor (C
NR
) can be used to further reduce
the noise by 6 dB to 10 dB (see Figure 23). Low leakage
capacitors in the 10 pF to 500 pF range provide the best
performance. Carefully connect to this node to avoid noise
pickup from external sources because the noise reduction pin
(NR) is internally connected to a high impedance node. The
pad connected to this pin must be as small as possible and long
PCB traces are not recommended.
When adding a noise reduction capacitor, use the following
guidelines:
Maintain a minimum load current of 1 mA when not in
shutdown.
For C
NR
values greater than 500 pF, add a 100 kΩ series
resistor (R
NR
).
It is important to note that as C
NR
increases, the turn on time is
delayed. When C
NR
values are greater than 1 nF, this delay may
be in the order of several milliseconds.
Figure 23. Noise Reduction Circuit
CHIP-ON-LEAD PACKAGE
The ADP3330 uses a Chip-on-Lead package design (protected
by U.S. Patent 5929514 A) to ensure the best thermal performance
in the 6-lead SOT-23 footprint. In a standard 6-lead SOT-23
package, the majority of the heat flows out of the ground pin.
The Chip-on-Lead package uses an electrically isolated die
attachment that allows all pins to contribute to the heat
conduction. This technique reduces the thermal resistance to
190°C/W on a 2-layer board as compared to >230°C/W for a
standard SOT-23 lead frame. Figure 24 and Figure 25 show the
difference between the standard 6-lead SOT-23 and the Chip-on-
Lead lead frames.
Figure 24. Normal 6-Lead SOT-23 Package
Figure 25. Thermally Enhanced, Chip-on-Lead Package
THERMAL OVERLOAD PROTECTION
The ADP3330 is protected against damage due to excessive
power dissipation by its thermal overload protection circuit,
which limits the die temperature to a maximum of 165°C.
Under extreme conditions, (that is, high ambient temperature
and power dissipation) where die temperature starts to rise
more than 165°C, the output current decreases until the die
temperature has dropped to a safe level. The output current is
restored when the die temperature is reduced.
Current and thermal limit protections protect the device against
accidental overload conditions. For normal operation, device
power dissipation must be externally limited so that the
junction temperatures do not exceed 125°C.
V
IN
+
C1
0.47µF
V
OUT
= 3.3V
NR
OUT
GND
IN
C2
0.47µF
+
ERR
SD
R1
330kΩ
C
NR
R
NR
ADP3330-3
12098-023
SILICON
DIE
12098-024
SILICON DIE WITH
ELECTRICALLY
ISOLATED
DIE ATTACH
12098-025
Rev. C | Page 11 of 16

ADP3330ARTZ-3-RL7

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Linear Voltage Regulators High Acc 200mA LDO Ultralow IQ
Lifecycle:
New from this manufacturer.
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