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BYC8-600,127
P1-P3
P4-P6
P7-P9
P10-P10
NXP Semiconductors
BYC8-600
Hyperfast power diode
BYC8-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
23 May 2013
3 / 9
003aab47
2
0
5
10
15
20
25
30
0
4
8
12
I
F(AV
)
(A)
P
t
ot
(W)
δ
=1
0.5
0.2
0.1
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
003aab47
1
0
4
8
12
16
20
0
2
4
6
8
I
F(AV
)
(A)
P
t
ot
(W)
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
8.
Thermal characteristics
T
able 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 3
-
-
2.2
K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
-
60
-
K/W
003aac977
1
10
- 1
10
Z
th(j-mb)
(K/W)
10
- 3
10
- 2
t
p
(s)
10
-
6
10
1
10
-
1
10
-
5
10
-
3
10
-
2
10
-
4
t
p
t
p
T
P
t
T
δ
=
Fig. 3.
T
ransient thermal impedance from junction to mounting base as a function of pulse width
NXP Semiconductors
BYC8-600
Hyperfast power diode
BYC8-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
23 May 2013
4 / 9
9.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
Static characteristics
I
F
= 8 A; T
j
= 25 °C
-
2
2.9
V
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
-
1.4
1.85
V
V
F
forward voltage
I
F
= 16 A; T
j
= 150 °C
-
1.7
2.3
V
V
R
= 600 V; T
j
= 25 °C
-
9
150
µA
I
R
reverse current
V
R
= 500 V; T
j
= 100 °C
-
1.1
3
mA
Dynamic characteristics
Q
r
recovered charge
I
F
= 1 A; V
R
= 100 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C
-
12
-
nC
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C
-
30
52
ns
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C;
Fig. 5
-
19
-
ns
t
rr
reverse recovery time
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
-
32
40
ns
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C
-
1.5
5.5
A
I
RM
peak reverse recovery
current
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C
-
9.5
12
A
V
FR
forward recovery
voltage
I
F
= 10 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
Fig. 6
-
8
10
V
NXP Semiconductors
BYC8-600
Hyperfast power diode
BYC8-600
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
23 May 2013
5 / 9
003aac
976
0
4
8
12
16
20
0
1
2
3
4
V
F
(V)
I
F
(A)
(1
)
(2
)
(3)
Fig. 4.
Forward current as a function of forward
voltage
003aac562
t
rr
time
100 %
25 %
I
F
dl
F
dt
I
R
I
RM
Q
r
Fig. 5.
Reverse recovery definitions; ramp recovery
001aab912
time
time
V
FRM
V
F
I
F
V
F
Fig. 6.
Forward recovery definitions
P1-P3
P4-P6
P7-P9
P10-P10
BYC8-600,127
Mfr. #:
Buy BYC8-600,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers RAIL PWRDIODE
Lifecycle:
New from this manufacturer.
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