MBR20H150CT, MBRF20H150CT, SB20H150CT-1
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Vishay General Semiconductor
Revision: 09-Aug-11
1
Document Number: 88864
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Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max., 10 s per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
150 V
I
FSM
200 A
V
F
0.75 V
T
J
max. 175 °C
ITO-220AB
TO-262AA
MBR20H150CT
MBRF20H150CT
SB20H150CT-1
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
1
2
3
1
2
3
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR20H150CT UNIT
Maximum repetitive peak reverse voltage V
RRM
150 V
Working peak reverse voltage V
RWM
150 V
Maximum DC blocking voltage V
DC
150 V
Maximum average forward rectified current
per device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I
FSM
200 A
Peak repetitive reverse current per diode at t
p
= 2 μs, 1 kHz
IRRM
1.0 A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) E
RSM
10 mJ
Non-repetitive avalanche energy per diode at 25 °C, I
AS
= 1.5 A, L = 10 mH E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min V
AC
1500 V
