LX5514
PRODUCTION DATA SHEET
Microsemi
Integrated Products Group
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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Copyright © 2004
Rev. 1.0, 2006-06-21
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WWW.Microsemi .COM
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
TM
®
DESCRIPTION
The LX5514 is a power amplifier
optimized for WLAN applications in
the 2.3 – 2.5GHz frequency range.
The power amplifier is implemented
as a two-stage monolithic microwave
integrated circuit (MMIC) with active
bias and output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). Power gain of 28dB is
obtained with a low quiescent current
of 80mA.
For 20dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 150mA total DC
current.
The LX5514 is available in a
standard 12-pin 2mm x 2mm micro-
lead package (MLP12L). The compact
footprint, low profile, and thermal
capability of the MLP package make the
LX5514 an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.3 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Quiescent Current 80mA
Power Gain 28dB
Total Current 150mA for
P
OUT
=20dBm OFDM
EVM ~3 % 54Mbps / 64QAM
Small Footprint: 2 x 2mm
Low Profile: 0.46mm
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5514LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5514LL-TR)
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