© 2008 IXYS All rights reserved
2 - 6
20080805a
MWI 25-12A7(T)
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
50
35
A
A
P
tot
total power dissipation
T
C
= 25°C 225 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 25 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.2
2.6
2.7 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 1 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 2
2 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 200 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
=0V;f=1MHz 1650 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
=35A 120 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 47 W
100
70
500
70
3.8
2.8
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 47 W
L=100µH;
clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
-L
S
·di/dt
70 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= V
CES
; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 47 W; non-repetitive
10 µs
R
thJC
thermal resistance junction to case
(perIGBT) 0.55 K/W
Diodes
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
50
33
A
A
V
F
forward voltage
I
F
= 25 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
2.3
1.7
2.7 V
V
I
RM
t
rr
E
rec(off)
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt=-400A/µs T
VJ
= 125°C
I
F
= 25 A; V
GE
= 0 V
20
200
1.3
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode) 1.19 K/W
T
C
= 25°C unless otherwise stated