MWI25-12A7

© 2008 IXYS All rights reserved
1 - 6
20080805a
MWI 25-12A7(T)
IXYS reserves the right to change limits, test conditions and dimensions.
IGBT Module
Sixpack
Short Circuit SOA Capability
Square RBSOA
Pin configuration see outlines.
Part name (Marking on product)
MWI25-12A7
MWI25-12A7T
E72873
I
C25
= 50 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
Application:
•ACmotorcontrol
•ACservoandrobotdrives
power supplies
Features:
•NPTIGBTtechnology
•lowsaturationvoltage
•positivetemperaturecoefcientfor
easy paralleling
•lowswitchinglosses
•switchingfrequencyupto30kHz
•squareRBSOA,nolatchup
•highshortcircuitcapability
•MOSinput,voltagecontrolled
•ultrafastfreewheelingdiodes
•solderablepinsforPCBmounting
•spacesavings
•reducedprotectioncircuits
Package:
•ULregistered
•IndustrystandardE2-pack
•packagewithcopperbaseplate
•packagedesignedforwavesoldering
16
15
14
9
10
11
12
5
6
7
8
1
2
3
4
13
17
T
T
T version
© 2008 IXYS All rights reserved
2 - 6
20080805a
MWI 25-12A7(T)
IXYS reserves the right to change limits, test conditions and dimensions.
IGBTs
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
CES
collector emitter voltage
T
VJ
= 25°C to 150°C 1200 V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
I
C25
I
C80
collector current
T
C
= 25°C
T
C
= 80°C
50
35
A
A
P
tot
total power dissipation
T
C
= 25°C 225 W
V
CE(sat)
collector emitter saturation voltage
I
C
= 25 A; V
GE
= 15 V T
VJ
= 25°C
T
VJ
= 125°C
2.2
2.6
2.7 V
V
V
GE(th)
gate emitter threshold voltage
I
C
= 1 mA; V
GE
= V
CE
T
VJ
= 25°C 4.5 6.5 V
I
CES
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C 2
2 mA
mA
I
GES
gate emitter leakage current
V
CE
= 0 V; V
GE
= ±20 V 200 nA
C
ies
input capacitance
V
CE
= 25 V; V
GE
=0V;f=1MHz 1650 pF
Q
G(on)
total gate charge
V
CE
= 600 V; V
GE
= 15 V; I
C
=35A 120 nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load T
VJ
= 125°C
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 47 W
100
70
500
70
3.8
2.8
ns
ns
ns
ns
mJ
mJ
I
CM
reverse bias safe operating area
RBSOA; V
GE
= ±15 V; R
G
= 47 W
L=100µH;
clamped induct. load
T
VJ
= 125°C
V
CEmax
= V
CES
-L
S
·di/dt
70 A
t
SC
(SCSOA)
short circuit safe operating area
V
CE
= V
CES
; V
GE
= ±15 V; T
VJ
= 125°C
R
G
= 47 W; non-repetitive
10 µs
R
thJC
thermal resistance junction to case
(perIGBT) 0.55 K/W
Diodes
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
RRM
max. repetitve reverse voltage
T
VJ
= 150°C 1200 V
I
F25
I
F80
forward current
T
C
= 25°C
T
C
= 80°C
50
33
A
A
V
F
forward voltage
I
F
= 25 A; V
GE
= 0 V T
VJ
= 25°C
T
VJ
= 125°C
2.3
1.7
2.7 V
V
I
RM
t
rr
E
rec(off)
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R
= 600 V
di
F
/dt=-400A/µs T
VJ
= 125°C
I
F
= 25 A; V
GE
= 0 V
20
200
1.3
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode) 1.19 K/W
T
C
= 25°C unless otherwise stated
© 2008 IXYS All rights reserved
3-6
20080805a
MWI 25-12A7(T)
IXYS reserves the right to change limits, test conditions and dimensions.
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
V
ISOL
isolation voltage
I
ISOL
<1mA;50/60Hz 2500 V~
M
d
mounting torque
(M4) 2.7 3.3 Nm
d
S
d
A
creep distance on surface
strike distance through air
6
6
mm
mm
Weight
180 g
R
thCH
thermal resistance case to heatsink
with heatsink compound 0.02 K/W
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V
0
R
0
IGBT
T1 - T6 T
VJ
= 125°C 1.5
40.7
V
mW
V
0
R
0
Diode
D1 - D6 T
VJ
= 125°C 1.3
16
V
mW
IGBT
Diode
R
1
R
2
-
-
-
-
C
1
C
2
-
-
-
-
I
V
0
R
0
R1 R2 R3 R4
C1 C2 C3 C4
τ
i
R
i
C
i
=
Zth t( )
1
n
i
R
i
1 exp
t
τ
i
=
=
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R
25
B
25/50
resistance
T
C
= 25°C 4.75 5.0
3375
5.25 kW
K

MWI25-12A7

Mfr. #:
Manufacturer:
Description:
MOD IGBT SIXPACK RBSOA 1200V E2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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