I
NTEGRATED
C
IRCUITS
D
IVISION
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2
R06
LDA201
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Typical values are characteristic of the device at +25°C,
and are the result of engineering evaluations. They are
provided for information purposes only, and are not part of
the manufacturing testing requirements.
Absolute Maximum Ratings @ 25ºC
Parameter Ratings Units
Breakdown Voltage 30 V
P
Reverse Input Voltage 5 V
Input Control Current 100 mA
Peak (10ms) 1 A
Power Dissipation
Input
1
150 mW
Phototransistor
2
150 mW
Isolation Voltage, Input to Output 3750 V
rms
Operational Temperature -40 to +85 ºC
Storage Temperature -40 to +125 ºC
1
Derate linearly 1.33mW / ºC
2
Derate linearly 2mW / ºC
Electrical Characteristics @ 25ºC
Parameter Conditions Symbol Min Typ Max Units
Output Characteristics
Phototransistor Breakdown Voltage I
C
= 10ABV
CEO
30 85 - V
Phototransistor Dark Current V
CEO
= 5V, I
F
= 0mA I
CEO
- 10 500 nA
Saturation Voltage I
C
= 2mA, I
F
= 1mA V
CE(sat)
- 0.3 0.5 V
Current Transfer Ratio I
F
= 1mA, V
CE
= 0.5V CTR 33 300 1000 %
Output Capacitance 25V, f =1MHz C
OUT
-6-pF
Input Characteristics
Input Control Current I
C
= 0.33mA, V
CE
= 0.5V I
F
--1mA
Input Voltage Drop I
F
= 5mA V
F
0.9 1.2 1.4 V
Reverse Input Current V
R
= 5V I
R
--10A
Common Characteristics
Capacitance, Input to Output - C
IO
-3-pF
Characteristic Symbol Test Condition Typ Units
Turn-On Time t
on
V
CC
=5V, I
F
=2mA, R
L
=1K
7
s
Turn-Off Time t
off
20
Switching Characteristics @ 25ºC
Switching Time Test Circuit
V
CC
V
CE
R
L
I
F
Pulse Width=5ms
Duty Cycle=1%
I
F
10%
90%
t
on
t
off
V
CE