IXYK120N120C3 Datasheet IXYX120N120C3, IXYK120N120C3 | P1-P3

IXYK120N120C3

IXYX120N120C3

V

CES

= 1200V

I

C110

= 120A

V

CE(sat)







3.20V

t

fi(typ)

= 96ns

DS100451B(9/13)

High-Speed IGBTs

for 20-50 kHz Switching

Features



Optimized for Low Switching Losses



Square RBSOA



International Standard Packages



Positive Thermal Coefficient of

Vce(sat)



Avalanche Rated



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 500A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 A

T

J

= 150C 1.5 mA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= I

C110

, V

GE

= 15V, Note 1 2.55 3.20 V

T

J

= 150C 3.40 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 240 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 120 A

I

CM

T

C

= 25°C, 1ms 700 A

I

A

T

C

= 25°C 60 A

E

AS

T

C

= 25°C 2 J

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 1 I

CM

= 240 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

P

C

T

C

= 25°C 1500 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb

Weight TO-264 10 g

PLUS247 6 g

1200V XPT

TM

IGBTs

GenX3

TM

G = Gate E = Emitter

C = Collector Tab = Collector

TO-264 (IXYK)

E

G

C

PLUS247 (IXYX)

G

Tab

E

C

G

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYK120N120C3

IXYX120N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 40 68 S

C

ie

s

9850 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 580 pF

C

res

218 pF

Q

g(on)

412 nC

Q

ge

I

C

= I

C110

, V

GE

= 15V, V

CE

= 0.5 • V

CES

73 nC

Q

gc

180 nC

t

d(on)

35 ns

t

ri

77 ns

E

on

6.75 mJ

t

d(off)

176 ns

t

fi

96 ns

E

of

f

5.10 mJ

t

d(on)

33 ns

t

ri

72 ns

E

on

10.30 mJ

t

d(off)

226 ns

t

fi

120 ns

E

off

7.20 mJ

R

thJC

0.10 °C/W

R

thCS

0.15 °C/W

Inductive load, T

J

= 25°C

I

C

= 100A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

Inductive load, T

J

= 150°C

I

C

= 100A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 1

Note 2

TO-264 Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

Terminals: 1 - Gate

2 - Collector

3 - Emitter

PLUS247

TM

Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXYK120N120C3

IXYX120N120C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

00.5 11.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

10V

7V

8V

6V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

02468101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

12V

11V

8V

9V

6V

7V

10V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

40

80

120

160

200

240

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

11V

10V

8V

7V

6V

9V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 120A

I

C

= 60A

I

C

= 240A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8

6789101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 240A

T

J

= 25ºC

120A

60A

Fig. 6. Input Admittance

0

40

80

120

160

200

240

280

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 150ºC

25ºC

- 40ºC

IXYK120N120C3

IXYK120N120C3

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