BD437TG Datasheet BD437TG, BD441G, BD435G | P1-P3

December, 2013 − Rev. 17

1 Publication Order Number:

BD437/D

BD435G, BD437G, BD439G,

BD441G

Plastic Medium-Power

Silicon NPN Transistors

This series of plastic, medium−power silicon NPN transistors can be

used for amplifier and switching applications.

Features

• Complementary Types are BD438 and BD442

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

BD435G

BD437G

BD439G

BD441G

V

CEO

32

45

60

80

Vdc

Collector−Base Voltage

BD435G

BD437G

BD439G

BD441G

V

CBO

32

45

60

80

Vdc

Emitter−Base Voltage V

EBO

5.0 Vdc

Collector Current I

C

4.0 Adc

Base Current I

B

1.0 Adc

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

36

288

W

W/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

–55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

3.5 °C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Device Package Shipping

4.0 AMPERES

POWER TRANSISTORS

NPN SILICON

MARKING DIAGRAM

ORDERING INFORMATION

Y = Year

WW = Work Week

BD4xx = Device Code

xx = 35, 37, 37T, 39, 41

G = Pb−Free Package

BD435G TO−225

(Pb−Free)

500 Units/Box

BD437G TO−225

(Pb−Free)

500 Units/Box

BD437TG TO−225

(Pb−Free)

50 Units/Rail

BD439G TO−225

(Pb−Free)

500 Units/Box

BD441G TO−225

(Pb−Free)

500 Units/Box

BASE 3

EMITTER 1

COLLECTOR 2, 4

TO−225

CASE 77−09

STYLE 1

1

2

3

YWW

BD4xxG

BD435G, BD437G, BD439G, BD441G

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

Collector−Emitter Breakdown Voltage

(I

C

= 100 mA, I

B

= 0)

BD435G

BD437G

BD439G

BD441G

V

(BR)CEO

32

45

60

80

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mA, I

B

= 0)

BD435G

BD437G

BD439G

BD441G

V

(BR)CBO

32

45

60

80

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 100 mA, I

C

= 0)

V

(BR)EBO

5.0 − −

Vdc

Collector Cutoff Current

(V

CB

= 32 V, I

E

= 0)

BD435G

(V

CB

= 45 V, I

E

= 0)

BD437G

(V

CB

= 60 V, I

E

= 0)

BD439G

(V

CB

= 80 V, I

E

= 0)

BD441G

I

CBO

−

0.1

mAdc

Emitter Cutoff Current

(V

EB

= 5.0 V)

I

EBO

− − 1.0

mAdc

DC Current Gain

(I

C

= 10 mA, V

CE

= 5.0 V)

BD435G

BD437G

BD439G

BD441G

h

FE

40

30

20

15

−

DC Current Gain

(I

C

= 500 mA, V

CE

= 1.0 V)

BD435G

BD437G

BD439G, BD441G

h

FE

85

40

−

475

375

475

−

DC Current Gain

(I

C

= 2.0 A, V

CE

= 1.0 V)

BD435G

BD437G

BD439G

BD441G

h

FE

50

40

25

15

−

Collector Saturation Voltage

(I

C

= 2.0 A, I

B

= 0.2 V)

BD435G

(I

C

= 3.0 A, I

B

= 0.3 A)

BD437G, BD439G, BD441G

V

CE(sat)

−

0.5

0.8

Vdc

Base−Emitter On Voltage

(I

C

= 2.0 A, V

CE

= 1.0 V)

V

BE(on)

− − 1.1

Vdc

Current−Gain − Bandwidth Product

(V

CE

= 1.0 V, I

C

= 250 mA, f = 1.0 MHz)

f

T

3.0 − −

MHz

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

BD435G, BD437G, BD439G, BD441G

http://onsemi.com

3

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 1. Collector Saturation Region

I

B

, BASE CURRENT (mA)

2.0

0

0.05

1.6

1.2

0.8

0.4

1.0 2.0 10 70 500

I

C

= 10 A 100 mA 1.0 A

0.1 100205.0

T

J

= 25°C

3.0 300.07 300200507.00.2 0.3 0.5 0.7

3.0 A

Figure 2. Current Gain

200

0

0.01

180

160

80

0.1

BD439, 441

0.02 30.30.2 1 520.50.03 0.05

I

C

, COLLECTOR CURRENT (AMP)

h

FE

, CURRENT GAIN (NORMALIZED)

BD433, 435, 437

140

120

100

60

40

20

2.0

0.005

I

C

, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.6

0

T

J

= 25°C

V

BE(sat)

@ I

C

/I

B

= 10

V

CE(sat)

@ I

C

/I

B

= 10

VOLTAGE (VOLTS)

Figure 3. “On” Voltage

0.02 0.030.05 0.1 0.2

V

BE

@ V

CE

= 2.0 V

0.01 0.3 0.5 1.0 2.0 3.0 4.

0

Figure 4. Active Region Safe Operating Area

10

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

4.0

1.0

0.1

2.0 10 20 100

0.5

I

C

, COLLECTOR CURRENT (AMP)

T

J

= 150°C

dc

5 ms

1.0 5.0 50

SECONDARY BREAKDOWN

THERMAL LIMIT T

C

= 25°C

BONDING WIRE LIMIT

CURVES APPLY BELOW RATED V

CEO

BD437

BD439

BD441

BD437TG

BD437TG

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