IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 64N50PD2
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 32 A, Note 1 65 72 S
C
iss
11 nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1020 pF
C
rss
80 pF
t
d(on)
28 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 64 A 32 ns
t
d(off)
R
G
= 2 Ω (External) 110 ns
t
f
30 ns
Q
g(on)
186 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 32 A 60 nC
Q
gd
62 nC
R
thJC
0.2 ° C/W
R
thCS
0.05 ° C/W
Source-Drain Diode Characteristic Values
T
J
= 25° C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 64 A
I
SM
Repetitive 200 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
I
F
= 25 A, -di/dt = 100 A/µs 200 ns
Q
RM
V
R
= 100 V, V
GS
= 0 V 0.8 µC
I
RM
8A
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
