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MBRS190T3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 11
1 Publication Order Number:
MBRS1100T3/D
MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 Volts
• 175°C Operating Junction Temperature
• Guardring for Stress Protection
• AEC−Q101 Qualified and PPAP Capable
• SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• All Packages are Pb−Free
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2,500 units per reel
• Cathode Polarity Band
SMB
CASE 403A
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
MARKING DIAGRAM
www.onsemi.com
B1 = Device Code
x = C for MBRS1100T3
9 for MBRS190T3
A = Assembly Location
Y = Year
WW = Work Week
G =Pb−Free Package
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
AYWW
B1xG
G
(Note: Microdot may be in either location)
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBRS190T3
MBRS1100T3
V
RRM
V
RWM
V
R
90
100
V
Average Rectified Forward Current
T
L
= 163°C
T
L
= 148°C
I
F(AV)
1.0
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
50
A
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change dv/dt 10 V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance − Junction−to−Lead (T
L
= 25°C)
R
q
JL
22 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2) (i
F
= 1.0 A, T
J
= 25°C) V
F
0.75 V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, T
J
= 100°C)
I
R
0.5
5.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device Marking Package Shipping
†
MBRS1100T3G B1C SMB
(Pb−Free)
2500 / Tape & Reel
SBRS81100T3G B1C SMB
(Pb−Free)
2500 / Tape & Reel
MBRS190T3G B19 SMB
(Pb−Free)
2500 / Tape & Reel
SBRS8190T3G B19 SMB
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current*
Figure 3. Power Dissipation Figure 4. Current Derating, Lead
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
100°C
25°C
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1k
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.01
0.02
0 102030405060708090100
T
J
= 150°C
125°C
100°C
V
R
, REVERSE VOLTAGE (VOLTS)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
J
= 100°C
SQUARE
WAVE
DC
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
P , AVERAGE POWER DISSIPATION (WATTS)
F(AV)
2.0
1.5
1.0
0.5
0
145 150 155 160 165 170 175 180
SQUARE
WAVE
DC
T
L
, LEAD TEMPERATURE (°C)
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
T
J
= 150°C
I
R
, REVERSE CURRENT ( A)μ
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if V
R
is sufficient below rated V
R
.
25°C
Figure 5. Typical Capacitance
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.1 0.2 0.5 1 2 5 10 20 50 100
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
P1-P3P4-P4

MBRS190T3G

Mfr. #:
Buy MBRS190T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1.5A 90V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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