OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSS138LT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
January, 2018 − Rev. 11
1 Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
• Low Threshold Voltage (V
GS(th)
: 0.85 V−1.5 V) Makes it Ideal for
Low Voltage Applications
• Miniature SOT−23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
50 Vdc
Gate−to−Source Voltage − Continuous V
GS
± 20 Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Pulsed Drain Current (t
p
≤ 10 ms)
I
D
I
DM
200
800
mA
Total Power Dissipation @ T
A
= 25°C P
D
225 mW
Operating and Storage Temperature
Range
T
J
, T
stg
− 55 to 150 °C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1
2
Device Package Shipping
†
ORDERING INFORMATION
N−Channel
SOT−23
CASE 318
STYLE 21
J1 MG
G
MARKING
DIAGRAM
2
1
3
200 mA, 50 V
R
DS(on)
= 3.5 W
BSS138LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
BVSS138LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
1
J1 = Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BSS138LT3G SOT−23
(Pb−Free)
10,000 / Tape & Ree
l
(Note: Microdot may be in either location)
BVSS138LT3G SOT−23
(Pb−Free)
10,000 / Tape & Ree
l
BSS138L, BVSS138L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
V
(BR)DSS
50 − − Vdc
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, 25°C)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, 25°C)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc, 150°C)
I
DSS
−
−
−
−
−
−
0.1
0.5
5.0
mAdc
Gate−Source Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±0.1
mAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.85 − 1.5 Vdc
Static Drain−to−Source On−Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= −40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
r
DS(on)
−
−
5.6
−
10
3.5
W
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
g
fs
100 − − mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
iss
− 40 50 pF
Output Capacitance (V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
oss
− 12 25
Transfer Capacitance (V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz) C
rss
− 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
t
d(on)
− − 20
ns
Turn−Off Delay Time t
d(off)
− − 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
BSS138L, BVSS138L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
Figure 1. On−Region Characteristics
1
T
J
, JUNCTION TEMPERATURE (°C)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation with
Temperature
V
GS
= 10 V
I
D
= 0.8 A
-55 -5 45 95
145
0.6
0.8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
4
0
Q
T
, TOTAL GATE CHARGE (pC)
8
500
V
DS
= 40 V
T
J
= 25°C
1000
I
D
= 200 mA
1500
1.2
2
1.4
1.6
1.8
V
GS
= 4.5 V
I
D
= 0.5 A
2000
10
2
6
V
gs(th)
, VARIANCE (VOLTS)
1
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 1.0 mA
-55 -5 45 95 145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1 1.5 2 2.5 3
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
V
DS
= 10 V
150°C
25°C
-55°C
3.5
0.5
4
024 10
0
0.3
0.4
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
6
0.1
8
0.6
0.2
0.5
13 957
V
GS
= 3.25 V
V
GS
= 2.75 V
V
GS
= 2.5 V
V
GS
= 3.0 V
V
GS
= 3.5 V
0.7
0.8
T
J
= 25°C
0.7
0.8
0.9
4.50.50
2.2
-30 20 70 120
2500 3000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
125°C
Figure 6. IDSS
1.0E-9
1.0E-8
10 15 20 25 30 35
1.0E-7
40
1.0E-6
1.0E-5
505045
150°C
I
DSS
, DRAIN-TO-SOURCE LEAKAGE (A)
P1-P3P4-P6

BSS138LT1G

Mfr. #:
Buy BSS138LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 50V 200mA N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet