BST52
Da
tasheet Number: DS33022 Rev. 4 - 2
2 of 6
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line o
Diodes Incorporated
BST52
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
90 V
Collector-Emitter Voltage
V
CEO
80 V
Emitter-Base Voltage
V
EBO
10 V
Continuous Collector Current
I
C
500 mA
Peak Pulse Current
I
CM
1.5 A
Base Current
I
B
100 mA
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 4)
R
θJA
125
°C/W
Thermal Resistance, Junction to Leads (Note 5)
R
θJL
8.66
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
25mm x 25mm 1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
25mm x 25mm 1oz Cu
T
amb
= 25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
25mm x 25mm 1oz Cu
T
amb
= 25°C
Single pulse
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
