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SS12P4CHM3/86A

P1-P3P4-P5
SS12P4C
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-14
1
Document Number: 89141
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal impedance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 6.0 A
V
RRM
40 V
I
FSM
150 A
E
AS
20 mJ
V
F
at I
F
= 6.0 A 0.40 V
T
J
max. 125 °C
Package TO-277A (SMPC)
Diode variations Dual common cathode
TO-277A (SMPC)
K
2
1
Anode 1
Anode 2
Cathode
K
eSMP
®
Series
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS12P4C UNIT
Device marking code S124C
Maximum repetitive peak reverse voltage V
RRM
40 V
Maximum average forward rectified current (fig. 1)
(1)
total device
I
F(AV)
12 A
per diode 6.0
Maximum average forward rectified current
(2)
total device I
F(AV)
3.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
E
AS
20 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
at T
J
= 25 °C per diode
I
RRM
1.0 A
Operating junction and storage temperature range T
J,
T
STG
-55 to +125 °C
SS12P4C
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-14
2
Document Number: 89141
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(3)
Pulse test: 300 μs pulse width, 1 % duty cycle
(4)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient.
(2)
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R
JM
- junction to mount.
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
• Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x
100 mm fin heat sink, T
M
measured at the terminal of cathode
band (R
JM
= 3 °C/W)
• Free air, mounted on recommended copper pad area
(R
JA
= 100 °C/W)
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 1 A
T
A
= 25 °C
V
F
(1)
0.34 -
V
I
F
= 3 A 0.40 -
I
F
= 6 A 0.46 0.52
I
F
= 1 A
T
A
= 100 °C
0.24 -
I
F
= 3 A 0.31 -
I
F
= 6 A 0.40 0.45
Reverse current per diode Rated V
R
T
A
= 25 °C
I
R
(2)
129 500 µA
T
A
= 100 °C 11.9 25 mA
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
400 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS12P4C UNIT
Typical thermal resistance
R
JA
(1)
100
°C/W
R
JM
(2)
3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS12P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS12P4C-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
SS12P4CHM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
SS12P4CHM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
SS12P4CHM3_A/H
(1)
0.10 H 1500 7" diameter plastic tape and reel
SS12P4CHM3_A/I
(1)
0.10 I 6500 13" diameter plastic tape and reel
10
12
14
8
6
4
2
0
0 25 50 75 125 150
DC Forward Current (A)
Ambient Temperature (°C)
100
T
M
= 100 °C
(1)
T
A
= 25 °C
(2)
SS12P4C
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-14
3
Document Number: 89141
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
D = 0.5
Average Forward Current (A)
Average Power Loss (W)
0 1 2 3 4 5 6 7
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
D = t
p
/T t
p
T
D = 1.0
D = 0.8
D = 0.1
D = 0.2
D = 0.3
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T
A
= 25 °C
T
A
= 125 °C
T
A
= 100 °C
0.01
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
0.1
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Impedance (°C/W)
Junction to Ambient
P1-P3P4-P5

SS12P4CHM3/86A

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Buy SS12P4CHM3/86A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-SS12P4CHM3_A/H
Lifecycle:
New from this manufacturer.
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