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BC857BW-G

P1-P3P4-P6
Small Signal Transistor
RoHS Device
Features
-Power dissipation
PCM: 0.15W (@TA=25°C)
-Collector current
ICM: -0.1A
-Collector-base voltage
VCBO: BC856W= -80V
BC857W= -50V
BC858W= -30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C
Mechanical data
-Case: SOT-323, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
BC856AW-G Thru. BC858CW-G (PNP)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Storage Temperature Range
Units
Symbol
Parameter Value
3
1 2
VCBO
VCEO
VEBO
IC
PC
-80
-50
-30
-65
-45
-30
-5
150
V
V
V
A
mW
Dimensions in inches and (millimeter)
SOT-323
1 2
3
0.087 (2.20)
0.079 (2.00)
0.096 (2.45)
0.085 (2.15)
0.016 (0.40)
0.008 (0.20)
0.053(1.35)
0.045(1.15)
0.039 (1.00)
0.035 (0.90)
0.010 (0.26)
0.004 (0.10) max
0.006 (0.15)
0.003 (0.08)
0.055 (1.40)
0.047 (1.20)
0.018 (0.46)
Junction Temperature
TJ
150
O
C
Collector Power Dissipation
BC856W-G
BC858W-G
BC857W-G
BC856W-G
BC858W-G
BC857W-G
-0.1
-1.BASE
-2.EMITTER
-3.COLLECTOR
TSTG
-65 to +150
O
C
-Ideally suited for automatic insertion
-For Switching and AF Amplifier Applications
Maximum Ratings (at Ta=25°C unless otherwise noted)
Comchip Technology CO., LTD.
Page 1
REV:B
QW-BTR36
Company reserves the right to improve product design , functions and reliability without notice.
Electrical Characteristics (TA= 25 °C unless otherwise specified)
Comchip Technology CO., LTD.
Page 2
REV:B
Small Signal Transistor
QW-BTR36
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Break Voltage down
Collector Cut-off Current
Collector-Emitter Saturation Voltage
Units
Symbol
Parameter
MIN
VCBO
VCEO
VEBO
ICBO
VCE(sat)
Cob
-80
-50
-30
-65
-45
-30
-5
-15
4.5
V
V
V
nA
Test Conditions
IC = -10μA , IE=0
IC = -10mA , IB=0
IE = -1μA , IC=0
VCB= -30V , IE=0
MAX
DC Current Gain
hFE
BC856AW,857AW,858AW
BC856BW,857BW,858BW
BC857CW,858CW
VCE = -5V , IC= -2mA
250
475
800
IC =-100mA , IB=-5mA
-0.65
Base-Emitter Saturation Voltage
VBE(sat)
V
IC =-100mA , IB=-5mA
Transition Frequency
fT
MHZ
100
VCE=-5V , IC=-10mA
f=100MHZ
Collector Capacitance
VCB =-10V , f=1MHZ
pF
BC856W-G
BC858W-G
BC857W-G
BC856W-G
BC858W-G
BC857W-G
-1.1
125
220
420
Company reserves the right to improve product design , functions and reliability without notice.
V
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
VBE (mV)
-400
-1200
Comchip Technology CO., LTD.
Page 3
REV:B
-10
-10
-200
-1
-800
Small Signal Transistor
QW-BTR36
IC (mA)
-600
-1000
0
-2
-10
-1
-10
2
-10
3
Tam
b=
-5
5°
C
T
a
m
b
=
2
5
°C
T
a
m
b
=
1
5
0
°
C
BC857AW;VCE= -5V
Fig.2- Base-Emitter Voltage as a function
of collector current;typical values
VBEsat (mV)
-400
-1200
-10
-10
-200
-1
-800
IC (mA)
-600
-1000
0
-1
-10
2
-10
3
BC857AW;IC/IB= 20
T
am
b=
-5
5°
C
T
am
b=
25
°C
T
am
b=15
0°
C
Fig.4- Base-emitter saturation voltage
as a function of collector current;
typical values
hFE
200
500
100
400
IC (mA)
300
0
Fig.1- DC current gain as a function fo
collector current ;typical values.
-10
-10
-1
-2
-10
-1
-10
2
-10
3
BC857AW;VCE= -5V
T
amb=150°C
T
amb=25°C
T
amb=-55°C
VCEsat (mV)
-10
-10
-1
IC (mA)
-1
-10
2
-10
3
Fig.3- Collector-emitter saturation voltage
as a function of collector current;
typical values.
-10
4
-10
3
-10
2
-10
Tamb=25°C
T
amb=-55°C
T
amb=150°C
BC857AW;IC/IB= 20
Fig.6- Base-emitter voltage as a function
VBE (mV)
-400
-1200
-10
-10
-200
-1
-800
IC (mA)
-600
-1000
0
-2
-10
-1
-10
2
-10
3
T
am
b=
-5
5°
C
T
a
m
b
=
2
5
°C
T
a
m
b
=
1
5
0
°
C
BC857BW;VCE=-5V
of collector current;typical values.
hFE
400
1000
200
800
IC (mA)
600
0
Fig.5- DC current gain as a function fo
collector current ;typical values.
-10
-10
-1
-2
-10
-1
-10
2
-10
3
BC857BW;VCE= -5V
T
amb=150°C
T
amb=25°C
T
amb=-55°C
Company reserves the right to improve product design , functions and reliability without notice.
P1-P3P4-P6

BC857BW-G

Mfr. #:
Buy BC857BW-G
Manufacturer:
Comchip Technology
Description:
Bipolar Transistors - BJT -50V, .-1A
Lifecycle:
New from this manufacturer.
Delivery:
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