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NSVRB751V40T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1 Publication Order Number:
RB751V40T1/D
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.28 Volts (Typ) @ I
F
= 1 mAdc
• Low Reverse Current
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage V
RM
40 V
Reverse Voltage V
R
30 Vdc
Forward Continuous Current (DC) I
F
30 mA
Peak Forward Surge Current I
FSM
500 mA
Electrostatic Discharge E
SD
HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
40 V SCHOTTKY
BARRIER DIODE
Device Package Shipping
†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
5E = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
5E MG
G
RB751V40T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
NSVRB751V40T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
RB751V40T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 μA)
V
(BR)R
30 − − Volts
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 2.0 2.5 pF
Reverse Leakage
(V
R
= 30 V)
I
R
− 300 500 nAdc
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
− 0.28 0.37 Vdc
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820 Ω
0.1 μF
DUT
V
R
100 μH
0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
RB751V40T1G
http://onsemi.com
3
25°C
125°C
85°C
T
A
= 150°C
0 0.05
V
F
, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.5
0
C
T
, CAPACITANCE (pF)
2.0 4.0
I
F
, FORWARD CURRENT (mA)
Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse
Voltage
Figure 4. Typical Capacitance
-40°C
25°C
I
R
, REVERSE CURRENT (μA)
-55°C
150°C
125°C
1000
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
P1-P3P4-P4

NSVRB751V40T1G

Mfr. #:
Buy NSVRB751V40T1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers SS SOD323 SPECIAL SHKY
Lifecycle:
New from this manufacturer.
Delivery:
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