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NTLUD3A50PZTBG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 2
1 Publication Order Number:
NTLUD3A50PZ/D
NTLUD3A50PZ
Power MOSFET
−20 V, −5.6 A, mCoolt Dual P−Channel,
2.0x2.0x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low R
DS(on)
• Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Load Switch
• Reverse Current Protection
• Battery Switch
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain-to-Source Voltage V
DSS
−20 V
Gate-to-Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−4.4
A
T
A
= 85°C −3.2
t ≤ 5 s T
A
= 25°C −5.6
Power Dissipa-
tion (Note 1)
Steady
State
T
A
= 25°C
P
D
1.4
W
t ≤ 5 s T
A
= 25°C 2.2
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−2.8
A
T
A
= 85°C −2.0
Power Dissipation (Note 2) T
A
= 25°C P
D
0.5 W
Pulsed Drain Current
tp = 10 ms
I
DM
−13 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
ESD (HBM, JESD22−A114)
ESD (MM, JESD22−A114)
V
ESD
1400
200
V
Source Current (Body Diode) (Note 2) I
S
−1.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces) based on both FETs on.
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 1 oz. Cu based on both FETs on.
http://onsemi.com
−20 V
70 mW @ −2.5 V
50 mW @ −4.5 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
MOSFET
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AA = Specific Device Code
M = Date Code
G = Pb−Free Package
AA MG
G
1
115 mW @ −1.8 V
MARKING
DIAGRAM
175 mW @ −1.5 V
(Top View)
(Note: Microdot may be in either location)
−5.6 A
G1
S1
P−Channel MOSFET
D1
UDFN6
CASE 517BF
mCOOLt
G2
S2
D2
1
6
NTLUD3A50PZ
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 3)
R
θJA
91
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
57
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
228
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
−13 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C −1.0
mA
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±5.0 V ±5.0
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −1.0 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
3.0 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −4.0 A 37 50
mW
V
GS
= −2.5 V, I
D
= −3.0 A 46 70
V
GS
= −1.8 V, I
D
= −2.0 A 63 115
V
GS
= −1.5 V, I
D
= −1.0 A 86 175
Forward Transconductance g
FS
V
DS
= −5.0 V, I
D
= −3.0 A 16 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= −15 V
920
pF
Output Capacitance C
OSS
85
Reverse Transfer Capacitance C
RSS
80
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −15 V;
I
D
= −3.0 A
10.4
nC
Threshold Gate Charge Q
G(TH)
0.5
Gate-to-Source Charge Q
GS
1.2
Gate-to-Drain Charge Q
GD
3.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −3.0 A, R
G
= 1 W
7.0
ns
Rise Time t
r
12
Turn-Off Delay Time t
d(OFF)
39
Fall Time t
f
30
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
V
GS
= 0 V,
I
S
= −1.0 A
T
J
= 25°C −0.67 −1.0
V
T
J
= 125°C −0.56
Reverse Recovery Time t
RR
V
GS
= 0 V, dis/dt = 100 A/ms,
I
S
= −1.0 A
12.1
ns
Charge Time t
a
6.4
Discharge Time t
b
5.7
Reverse Recovery Charge Q
RR
4.0 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) based on both FETs on.
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 1 oz. Cu based on both FETs on.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUD3A50PZ
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
−I
DSS
, LEAKAGE (nA)
V
GS
= −2.5 V
−3.0 V
−4.5 to −3.5 V
−1.5 V
V
DS
= −5 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
I
D
= −4.0 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
−1.8 V
−2.5 V
V
GS
= −4.5 V
V
GS
= −4.5 V
I
D
= −4.0 A
T
J
= 85°C
T
J
= 125°C
100
1000
10000
100000
2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
−1.8 V
−2 V
0
2
4
6
8
10
12
14
16
18
20
0.5 1 1.5 2 2.5
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 10 12 14 16 18
−1.5 V
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
−50 −25 0 25 50 75 100 125 150
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
20
P1-P3P4-P6

NTLUD3A50PZTBG

Mfr. #:
Buy NTLUD3A50PZTBG
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET UDFN6 20V 5.6A 50MOH
Lifecycle:
New from this manufacturer.
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