SQJ951EP-T1_GE3 Datasheet SQJ951EP-T1_GE3 | P1-P3

SQJ951EP

www.vishay.com

Vishay Siliconix

S12-0316-Rev. A, 27-Feb-12

1

Document Number: 63658

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET

®

Power MOSFET

• AEC-Q101 Qualified

d

•100 % R

g

and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

V

DS

(V) - 30

R

DS(on)

(Ω) at V

GS

= - 10 V 0.017

R

DS(on)

(Ω) at V

GS

= - 4.5 V 0.036

I

D

(A) - 30

Configuration Dual

4

3

2

1

6.15 mm

5.13 mm

Bottom View

PowerPAK

®

SO-8L Dual

G

2

S

2

G

1

S

1

D

2

D

1

S

1

G

1

D

1

P-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

ORDERING INFORMATION

Package PowerPAK SO-8L

Lead (Pb)-free and Halogen-free SQJ951EP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

- 30

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

- 30

A

T

C

= 125 °C - 28

Continuous Source Current (Diode Conduction)

a

I

S

- 30

Pulsed Drain Current

b

I

DM

- 120

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

- 27

Single Pulse Avalanche Energy E

AS

36.5 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

56

W

T

C

= 125 °C 18.5

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

85

°C/W

Junction-to-Case (Drain) R

thJC

2.7

SQJ951EP

www.vishay.com

Vishay Siliconix

S12-0316-Rev. A, 27-Feb-12

2

Document Number: 63658

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= - 250 μA - 30 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= - 250 μA - 1.5 - 2.0 - 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= - 30 V - - - 1

μA V

GS

= 0 V V

DS

= - 30 V, T

J

= 125 °C - - - 50

V

GS

= 0 V V

DS

= - 30 V, T

J

= 175 °C - - - 150

On-State Drain Current

a

I

D(on)

V

GS

= - 10 V V

DS

= - 5 V - 30 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 10 V I

D

= - 7.5 A - 0.014 0.017

ΩV

GS

= - 10 V I

D

= - 7.5A, T

J

= 125 °C - - 0.034

V

GS

= - 10 V I

D

= - 7.5 A, T

J

= 175 °C - - 0.039

V

GS

= - 4.5 V I

D

= - 5 A - 0.030 0.036

Forward Transconductance

b

g

fs

V

DS

= - 15 V, I

D

= - 7.5 A - 18 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= - 10 V, f = 1 MHz

- 1345 1680

pF Output Capacitance C

oss

- 330 415

Reverse Transfer Capacitance C

rss

- 245 305

Total Gate Charge

c

Q

g

V

GS

= - 10 V V

DS

= - 15 V, I

D

= - 9 A

-3350

nC Gate-Source Charge

c

Q

gs

-5.5-

Gate-Drain Charge

c

Q

gd

-9.4-

Gate Resistance R

g

f = 1 MHz 3 6.31 10.5 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= - 15 V, R

L

= 1.66 Ω

I

D

≅ - 9 A, V

GEN

= - 10 V, R

g

= 6 Ω

-1218

ns

Rise Time

c

t

r

-1218

Turn-Off Delay Time

c

t

d(off)

-3959

Fall Time

c

t

f

-2842

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

- - - 120 A

Forward Voltage V

SD

I

F

= - 4.5 A, V

GS

= 0 - - 0.8 - 1.2 V

SQJ951EP

www.vishay.com

Vishay Siliconix

S12-0316-Rev. A, 27-Feb-12

3

Document Number: 63658

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

6

12

18

24

30

0 2 4 6 8 10

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V thru 5 V

V

GS

= 3 V

V

GS

= 4 V

0

6

12

18

24

30

0 4 8 12 16 20

g

fs

- Transconductance (S)

I

D

- Drain Current (A)

T

C

= 125 °C

T

C

= -

55 °C

T

C

= 25 °C

0

500

1000

1500

2000

2500

0 5 10 15 20 25 30

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

6

12

18

24

30

0 2 4 6 8 10

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= -

55 °C

T

C

= 125 °C

T

C

= 25 °C

0.00

0.02

0.04

0.06

0.08

0.10

0 6 12 18 24 30

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 7 14 21 28 35

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

I

D

= 9 A

V

DS

= 15 V

SQJ951EP-T1_GE3

SQJ951EP-T1_GE3

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