Characteristics STPS20SM100S
2/11 Doc ID 15524 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.6 x I
F(AV)
+ 0.005 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward current δ = 0.5
TO-220AB, D
2
PAK, I
2
PAK T
c
= 125 °C
20 A
TO-220FPAB T
c
= 85 °C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal,
terminals 1 and 3 short circuited
350 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 15000 W
V
ARM
(2)
Maximum repetitive peak avalanche
voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 37.5 A
120 V
V
ASM
(2)
Maximum single pulse peak
avalanche voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 37.5 A
120 V
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 14.
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB, D
2
PAK, I
2
PA K 1 . 3
°C/W
TO-220FPAB 4
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
10 30 µA
T
j
= 125 °C 10 30 mA
T
j
= 25 °C
V
R
= 70 V
5µA
T
j
= 125 °C 5 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
565
mV
T
j
= 125 °C 480
T
j
= 25 °C
I
F
= 10 A
685
T
j
= 125 °C 560 620
T
j
= 25 °C
I
F
= 20 A
800 900
T
j
= 125 °C 630 700
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
