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VS-MBR20100CT-1HM3

P1-P3P4-P6P7-P8
VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 03-Mar-15
1
Document Number: 95859
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Center tap D
2
PAK and TO-262 packages
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
2 x 10 A
V
R
80 V, 100 V
V
F
at I
F
0.70 V
I
RM
6 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
24 mJ
TO-263AB (D
2
PAK)
TO-262AA
V
S-MBRB20...CTHM3
VS-MBR20 ...CT-1HM3
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 20
A
I
FRM
T
C
= 133 °C (per leg) 20
V
RRM
80 to 100 V
I
FSM
t
p
= 5 μs sine 850 A
V
F
10 A
pk
, T
J
= 125 °C 0.70 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-MBRB2080CTHM3
VS-MBR2080CT-1HM3
VS-MBRB2090CTHM3
VS-MBR2090CT-1HM3
VS-MBRB20100CTHM3
VS-MBR20100CT-1HM3
UNITS
Maximum DC reverse voltage V
R
80 90 100 V
Maximum working peak reverse voltage V
RWM
VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 03-Mar-15
2
Document Number: 95859
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 133 °C, rated V
R
10
A
per device 20
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 133 °C 20
Non-repetitive peak surge current I
FSM
5 μs sine or
3 μs rect. pulse
Following any rated load condition
and with rated V
RRM
applied
850
Surge applied at rated load conditions half wave,
single phase, 60 Hz
150
Peak repetitive reverse surge current I
RRM
2.0 μs, 1.0 kHz 0.5
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 12 mH 24 mJ
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
10 A
T
J
= 25 °C
0.80
V
20 A 0.95
10 A
T
J
= 125 °C
0.70
20 A 0.85
Maximum instantaneous reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.10
mA
T
J
= 125 °C 6
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.433 V
Forward slope resistance r
t
15.8 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 400 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
-55 to +150
°C
Maximum storage temperature range T
Stg
-65 to +150
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D
2
PAK
MBRB2090CTH
MBRB2080CTH
MBRB20100CTH
Case style TO-262
MBR2090CT-1H
MBR2080CT-1H
MBR20100CT-1H
VS-MBRB20...CTHM3, VS-MBR20...CT-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 03-Mar-15
3
Document Number: 95859
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
100
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4
0.6
0.8 1.0 1.2
1.4
1.6 1.8
0.2
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.1
1
10
0.01
0.001
100
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20
60 10080
40
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40
20 60
80
100
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P8

VS-MBR20100CT-1HM3

Mfr. #:
Buy VS-MBR20100CT-1HM3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - TO-262-e3
Lifecycle:
New from this manufacturer.
Delivery:
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