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DG9431DV-T1

P1-P3P4-P6P7-P8
Vishay Siliconix
DG9431
Document Number: 70831
S-71009–Rev. D, 14-May-07
www.vishay.com
1
Low-Voltage Single SPDT Analog Switch
FEATURES
• Low Voltage Operation (+ 2.7 to + 5 V)
• Low On-Resistance - r
DS(on)
: 20 Ω
• Fast Switching - t
ON
: 35 ns, t
OFF
: 20 ns
• Low Leakage - I
COM(on)
: 200-pA max
• Low Charge Injection - Q
INJ
: 1 pC
• Low Power Consumption
• TTL/CMOS Compatible
• ESD Protection > 2000 V (Method 3015.7)
• Available in TSOP-6 and SOIC-8
• Lead (Pb)-Free Version is RoHS Compliant
BENEFITS
• Reduced Power Consumption
• Simple Logic Interface
• High Accuracy
• Reduce Board Space (TSOP-6)
APPLICATIONS
• Battery Operated Systems
• Portable Test Equipment
• Sample and Hold Circuits
• Cellular Phones
• Communication Systems
• Military Radio
• PBX, PABX Guidance and Control Systems
DESCRIPTION
The DG9431 is a single-pole/double-throw monolithic CMOS
analog device designed for high performance switching of
analog signals. Combining low power, high speed
(t
ON
: 35 ns, t
OFF
: 20 ns), low on-resistance (r
DS(on)
: 20 Ω)
and small physical size (TSOP-6), the DG9431 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG9431 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per Method
3015.7, is 2000 V. An epitaxial layer prevents latchup.
Break-before -make is guaranteed for DG9431.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product
with the lead (Pb)-free device terminations. For analog
switching products manufactured with 100 % matte tin
device terminations, the lead (Pb)-free “-E3” suffix is being
used as a designator.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
NO V+
COM
SOIC-8
IN
NC *
GND *
1
2
3
4
8
7
6
5
Top View
*Not Connected
NO
COM
NC
1
2
3
6
5
Top View
IN
V+
GND
4
TSOP-6
TRUTH TABLE
Logic NC NO
0ONOFF
1OFFON
ORDERING INFORMATION
Temp Range Package Part Number
- 40 to 85 °C
TSOP-6
DG9431DV-T1
DG9431DV-T1-E3 (Lead (Pb)-free)
SOIC-8
DG9431DY-T1
DG9431DY-T1-E3 (Lead (Pb)-free)
Available
Pb-free
RoHS*
COMPLIANT
www.vishay.com
2
Document Number: 70831
S-71009–Rev. D, 14-May-07
Vishay Siliconix
DG9431
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/°C above 75 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Reference V+ to GND - 0.3 to + 13
V
IN, COM, NC, NO
a
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal) ± 20
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle) ± 40
ESD (Method 3015.7) > 2000 V
Storage Temperature (D Suffix) - 65 to 125 °C
Power Dissipation (Packages)
b
8-Pin Narrow Body SOIC
c
400 mW
SPECIFICATIONS (V+ = 3 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
Temp
a
D Suffix
- 40 to 85 °C
Unit Min
c
Typ
b
Max
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 3 V
Drain-Source On–Resistance
r
DS(on)
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
Room
Full
30 50
80
Ω
r
DS(on)
Match
d
Δr
DS(on)
V
NO
or V
NC
= 1.5 V
Room 0.4 2
r
DS(on)
Flatness
f
r
DS(on)
Flatness
V
NO
or V
NC
= 1 and 2 V
Room 4 8
NO or NC Off Leakage
Current
g
I
NO/NC(off)
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
Room
Full
- 100
- 5000
5100
5000
pA
COM Off Leakage Current
g
I
COM(off)
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
Room
Full
- 100
- 5000
5100
5000
Channel-On Leakage Current
g
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/2 V
Room
Full
- 200
- 10000
10 200
10000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tur n - O n T i m e
t
ON
V
NO
or V
NC
= 1.5 V
Room
Full
50 120
200
ns
Turn-Off Time
t
OFF
Room
Full
20 50
120
Break-Before-Make Time
t
d
Room 3 20
Charge Injection
Q
INJ
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0 Ω
Room 1 5 pC
Off-Isolation OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room - 74 dB
Source Off Capacitance
C
S(off)
f = 1 MHz
Room 7
pF
Channel-On Capacitance
C
D(on)
Room 32
Power Supply
Power Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 3.3 V, V
IN
= 0 or 3.3 V
1µA
Document Number: 70831
S-71009–Rev. D, 14-May-07
www.vishay.com
3
Vishay Siliconix
DG9431
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guraranteed by 5-V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %, V
IN
= 0.8 or 2.4 V
e
Temp
a
D Suffix
- 40 to 85 °C
Unit Min
c
Typ
b
Max
c
Analog Switch
Analog Signal Range
d
V
ANALOG
Full 0 5 V
Drain-Source On–Resistance
r
DS(on)
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
Room
Full
20 30
50
Ω
r
DS(on)
Match
d
Δr
DS(on)
V
NO
or V
NC
= 1.5 V
Room 0.4 2
r
DS(on)
Flatness
f
r
DS(on)
Flatness
V
NO
or V
NC
= 1, 2 and 3 V
Room 2 6
NO or NC Off Leakage Current
I
NO/NC(off)
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
Room
Full
- 100
- 5000
10 100
5000
pACOM Off Leakage Current
I
COM(off)
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
Room
Full
- 100
- 5000
10 100
5000
Channel-On Leakage Current
I
COM(on)
V
COM
= V
NO
or V
NC
= 1 V/4 V
Room
Full
- 200
- 10000
200
10000
Digital Control
Input Current
I
INL
or I
INH
Full 1 µA
Dynamic Characteristics
Tu r n - O n T im e
t
ON
V
NO
or V
NC
= 3.0 V
Room
Full
35 75
150
ns
Turn-Off Time
t
OFF
Room
Full
20 50
100
Break-Before-Make Time
t
d
Room 3 10
Charge Injection
Q
INJ
C
L
= 1 nF, V
gen
= 0 V, R
gen
= 0 Ω
Room 2 5 pC
Off-Isolation OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room - 74 dB
NC and NO Capacitance
C
(off)
f = 1 MHz
Room - 7
pF
Channel-On Capacitance
C
D(on)
Room 32
Power Supply
Power Supply Range V+ 2.7 12 V
Power Supply Current I+
V+ = 5.5 V, V
IN
= 0 or 5.5 V
1µA
P1-P3P4-P6P7-P8

DG9431DV-T1

Mfr. #:
Buy DG9431DV-T1
Manufacturer:
Vishay
Description:
IC ANALOG SWITCH SPDT LV 6TSOP
Lifecycle:
New from this manufacturer.
Delivery:
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