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TSMBJ0322C

P1-P3P4-P5
Transient Voltage
Protection Device
75 to 320 Volts
)HDWXUHV
• Oxide-Glass passivated Junction
• Bi-Directional protection in a single device
• Surge capabilities up to 50A@10/1000us or 150A@8/20us
• High Off-State impedance and Low On-State voltage
• Plastic material has UL flammability classification 94V -0
0HFKDQLFDO'DWD
• Case : Molded plastic
• Polarity : None cathode band denotes
• Approx Weight : 0.093grams
Characteristic Symbol Value Unit
Non-repetitive peak
impulse current
I
PP
50A 10/1000us
Non-repetitive peak
On-state current
I
TSM
20A
8.3ms, one-half
cycle
Operating temperature
range
T
OP
-40~125
o
C
Junction and storage
temperature range
T
J
,T
STG
-55~150
o
C
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Characteristic Symbol Value Unit
Thermal Resistance
junction to ambient
120
o
C/W
On recommended
pad layout
Typical positive
temperature
coefficient for
breakdown voltage
0.1%/
o
C
0D[LPXP5DWLQJ
Thermal Resistance
junction to lead
30
o
C/W
Ϧ
V
BR
/
Ϧ
T
J
R
JA
R
JL
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TSMBJ0306C
THRU
TSMBJ0324C
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20736 Marilla Street Chatsworth
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MCC
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TM
Micro Commercial Components
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MCC
TSMBJ0306C thru TSMBJ0324C
Parameter
Rated
Repetitive Off-
state Voltage
Off-state
Leakage
Current@V
DRM
Breakover
Voltage
On-State
Voltage
@I
T
=1.0A
Breakover Current Holding Current
Off-State
Capacitanc
e
6\PERO 9
'50
,
'50
9
%2
9
7
,
%2
,
+
&
-
8QLWV 9ROWV X$ 9ROWV 9ROWV P$ P$ S)
/LPLW 0D[ 0D[ 0D[ 0D[ 0D[ 0LQ 7\S
760%-&    
760%-&    
760%-&
760%-&
760%-&     
760%-&   
760%-&
760%-&    
ELECTRICAL CHARACTERISTIC
@25
к
Unless otherwise specified
MAXIMUM RATED SURGE WAVEFORM
MAXIMUM RATED SURGE WAVEFORMMAXIMUM RATED SURGE WAVEFORM
MAXIMUM RATED SURGE WAVEFORM
Waveform Standard Ipp (A)
2/10 us GR-1089-CORE 200
8/20 us IEC 61000-4-5 150
10/160 us FCC Part 68 100
10/700 us ITU-T K20/21 60
10/560 us FCC Part 68 60
10/1000 us GR-1089-CORE 50
TIME
0
50
100
0
Ipp ; PEAK PULSE CURRENT (%)
Peak value (Ipp)
Half value
tr tp
tr = rise time to peak value
tp = decay time to half value
Symbol Parameter
V
DRM
Stand-off voltage
I
DRM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
I
BR
Breakdown current
V
BO
Breakover voltage
I
BO
Breakover current
I
H
Holding current
NOTE: 1
V
T
On state voltage
I
PP
Peak pulse current
C
O
Off-state capacitance
NOTE: 2
I
V
V
DRM
I
PP
I
BO
I
H
I
BR
I
DRM
V
BR
V
BO
V
T
NOTE
Κ
1. I
H
> ( V
L
/ R
L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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TM
Micro Commercial Components
MCC
TSMBJ0306C thru TSMBJ0324C
-50 -25 0 25 50 75 100 125 150 175
Tj ; JUNCTION TEMPERATURE (
к
)
0.9
0.95
1
1.05
1.1
1.15
1.2
NORMALISED BREAKDOWN VOLTAGE
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
-25 0 25 50 75 100 125 150
Tj , JUNCTION TEMPERATURE (
к
)
0.001
0.01
0.1
1
10
100
I(DRM) , OFF-STATE CURRENT(uA)
Fig.1 - Off-State Current v.s Junction Temperature
V
DRM
= 50V
V
BR
(T
J
)
V
BR
(T
J
=25
к
)
-50 -25 0 25 50 75 100 125 150 175
Tj ; JUNCTION TEMPERATURE (
к
)
0.95
1
1.05
1.1
NORMALISED BREAKOVER VOLTAGE
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
V
BO
(T
J
)
V
BO
(T
J
=25
к
)
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V(T) ; ON-STATE VOLTAGE
1
10
100
I(T) ; ON-STATE CURRENT (A)
Fig.4 - On-State Current v.s On-State Voltage
T
J
= 25
к
-50 -25 0 25 50 75 100 125
Tj ; JUNCTION TEMPERATURE (
к
)
0
0.5
1
1.5
2
NORMALISED HOLDING CURRENT
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
I
H
(T
J
)
I
H
(T
J
=25
к
)
1 10 100
VR ; REVERSE VOLTAGE (V)
0.1
1
NORMALISED CAPACITANCE
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
Tj =25
к
f=1MHz
V
RMS
= 1V
C
O
(VR)
C
O
(VR = 1V)
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
TM
Micro Commercial Components
P1-P3P4-P5

TSMBJ0322C

Mfr. #:
Buy TSMBJ0322C
Manufacturer:
Description:
THYRISTOR 275V 150A DO214AA
Lifecycle:
New from this manufacturer.
Delivery:
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