March 2007 Rev 3 1/10
STTH1R02
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
Description
The STTH1R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.
Packaged in DO-41, DO-15, SMA, and SMB, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Order codes
I
F(AV)
1.5 A
V
RRM
200 V
T
j
(max) 175° C
V
F
(typ) 0.7 V
t
rr
(typ) 15 ns
Part Number Marking
STTH1R02 STTH1R02
STTH1R02RL STTH1R02
STTH1R02A R1A
STTH1R02Q STTH1R02Q
STTH1R02QRL STTH1R02Q
STTH1R02U 1R2S
KA
K
K
A
A
SMA
STTH1R02A
SMB
STTH1R02U
K
K
A
A
DO-41
STTH1R02
DO-15
STTH1R02Q
www.st.com
Characteristics STTH1R02
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.68 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 200 V
I
FRM
Repetitive peak forward current
DO-41
(1)
t
p
= 5 µs, F = 5 kHz
30 ADO-15
(1)
SMA / SMB
I
F(RMS)
RMS forward current
DO-41 / DO-15
50 A
SMA /SMB
I
F(AV)
Average forward current, δ = 0.5
DO-41 T
lead
= 110° C
1.5 A
DO-15 T
lead
= 110° C
SMA T
c
= 110° C
SMB T
c
= 110° C
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 60 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature 175 °C
1. On infinite heatsink with 10 mm lead length
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead Lead Length = 10 mm on infinite heatsink
DO-41 45
°C/W
DO-15 45
R
th(j-c)
Junction to case
SMA 30
SMB 30
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
3
µA
T
j
= 125° C 2 20
V
F
(2)
Forward voltage drop
T
j
= 25° C I
F
= 4.5 A 1.2
V
T
j
= 25° C
I
F
= 1.5 A
0.89 1
T
j
= 100° C 0.76 0.85
T
j
= 150° C 0.70 0.80
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH1R02 Characteristics
3/10
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
23 30
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
15 20
I
RM
Reverse recovery current
I
F
= 1.5 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
34 A
t
fr
Forward recovery time
I
F
= 1.5 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
50 ns
V
FP
Forward recovery voltage
I
F
= 1.5 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
2.1 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
0
5
10
15
20
25
30
35
40
45
50
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
M
(A)
T
d
=tp/T
tp
I
M
T
δ
=tp/T
tp
I
M
P = 2 WP = 2 W
P = 1 WP = 1 W
P = 5 WP = 5 W
δ
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
Figure 3. Forward voltage drop versus
forward current (maximum values)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (SMA)
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z
th(j-a)
/R
th(j-a)
Single pulse
SMA
S
cu
=1cm²
t
P
(s)

STTH1R02

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Rectifiers Recovery Diode Ultra Fast
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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