IDT8N4SV76 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
Factory Datasheet. Contains Confidential Information. Do not send to customers.
Factory Datasheet. Contains Confidential Information. Do not send to customers.
IDT8N4SV76CCD
REVISION B NOVEMBER 20, 2013 7 ©2013 Integrated Device Technology, Inc.
AC Electrical Characteristics
Notes are continued on next page.
Table 5A. AC Characteristics, V
DD
= 3.3V ± 5% or 2.5V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
OUT
Output Frequency Q, nQ
15.476 866.67 MHz
975 1,300 MHz
f
I
Initial Accuracy Measured @ 25°C, V
C
=V
DD
/2 ±10 ppm
f
S
Temperature Stability
Option code=AorB ±100 ppm
Option code=EorF ±50 ppm
Option code=KorL ±20 ppm
f
A
Aging
Frequency drift over 10 year life ±3 ppm
Frequency drift over 15 year life ±5 ppm
f
T
Total Stability
Option code A, B (10 year life) ±113 ppm
Option code E, F (10 year life) ±63 ppm
Option code K, L (10 year life) ±33 ppm
tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 6 14 ps
tjit(per) Period Jitter; NOTE 1 4 6 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2,3
156.25MHz, Integration Range:
12kHz - 20MHz
0.53 0.73 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2,3
f
XTAL
= 114.285mhz
500MHz < f
OUT
1300MHz 0.46 0.67 ps
100MHz < f
OUT
500MHz 0.48 0.63 ps
15MHz f
OUT
100MHz 0.76 1.4 ps
N
(100)
Single-side Band Phase
Noise,
100Hz from Carrier
156.25MHz -67 dBc/Hz
N
(1k)
Single-side Band Phase
Noise, 1kHz from Carrier
156.25MHz -89 dBc/Hz
N
(10k)
Single-side Band Phase
Noise, 10kHz from Carrier
156.25MHz -113 dBc/Hz
N
(100k)
Single-side Band Phase
Noise, 100kHz from Carrier
156.25MHz -118 dBc/Hz
N
(1M)
Single-side Band Phase
Noise, 1MHz from Carrier
156.25MHz -127 dBc/Hz
N
(10M)
Single-side Band Phase
Noise, 10MHz from Carrier
156.25MHz -137 dBc/Hz
PSNR
Power Supply Noise
Rejection
50mV Sinusoidal Noise
1kHz - 50MHz
-58.7 dBc
t
R
/t
F
Output Rise/Fall Time 20% to 80% 80 500 ps
odc Output Duty Cycle 45 55 %
t
STARTUP
Device Startup Time after
Power-up
15 ms
IDT8N4SV76 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
Factory Datasheet. Contains Confidential Information. Do not send to customers.
Factory Datasheet. Contains Confidential Information. Do not send to customers.
IDT8N4SV76CCD
REVISION B NOVEMBER 20, 2013 8 ©2013 Integrated Device Technology, Inc.
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
Notes continued on next page.
NOTE: XTAL parameters (initial accuracy, temperature stability, aging and total stability) are guaranteed by manufacturing.
NOTE: Characterized with V
C
=V
DD
/2.
NOTE: XTAL parameters (initial accuracy, temperature stability, aging and total stability) are guaranteed by manufacturing.
NOTE 1: This parameter is defined in accordance with JEDEC standard 65.
NOTE 2: Please refer to the phase noise plots.
NOTE 3: Please see the FemtoClock NG Ceramic 5x7 Modules Programming guide for more information on PLL feedback modes and the
optimum configuration for phase noise.
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is
mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium
has been reached under these conditions.
NOTE 1: V
C
= 10% to 90% of V
DD
.
NOTE 2: Nominal oscillator gain: Pull range divided by the control voltage tuning range of 3.3V. E.g. for ADC_GAIN [6:0] = 000001 the pull
range is ± 12.5ppm, resulting in an oscillator gain of 25ppm ÷ 3.3V = 7.57ppm/V.
NOTE 3: For best phase noise performance, use the lowest K
V
that meets the requirements of the application.
NOTE 4: BSL = Best Straight Line Fit: Variation of the output frequency vs. control voltage V
C
, in percent. V
C
ranges from 10% to 90% V
DD
.
Table 5B. VCXO Control Voltage Input (V
C
) Characteristics, V
DD
=3.3V±5%or 2.5V±5,T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
K
V
Oscillator Gain, NOTE 1, 2, 3 V
DD
= 3.3V 7.57 477.27 ppm/V
Oscillator Gain, NOTE 1, 2, 3 V
DD
= 2.5V 10 630 ppm/V
L
VC
Control Voltage Linearity;
NOTE 4
BSL Variation -1 ±0.1 +1 %
BW Modulation Bandwidth 100 kHz
Z
VC
VC Input Impedance 500 k
VC
NOM
Nominal Control Voltage V
DD
/2 V
V
C
Control Voltage Tuning
Range; NOTE 4
0V
DD
V
IDT8N4SV76 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
Factory Datasheet. Contains Confidential Information. Do not send to customers.
Factory Datasheet. Contains Confidential Information. Do not send to customers.
IDT8N4SV76CCD
REVISION B NOVEMBER 20, 2013 9 ©2013 Integrated Device Technology, Inc.
Typical Phase Noise at 156.25MHz (12kHz - 20MHz)
Noise Power (dBc/Hz)
Offset Frequency (Hz)

8N4SV76KC-0153CDI8

Mfr. #:
Manufacturer:
Description:
IC OSC VCXO 100MHZ 6-CLCC
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