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IXGK320N60B3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK320N60B3
IXGX320N60B3
Fig. 9. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1Ω
dv / dt < 10V / ns
Fig. 10. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 7. Gate Charge
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 320A
I
G
= 10mA
Fig. 8. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2010 IXYS CORPORATION, All Rights Reserved
IXGK320N60B3
IXGX320N60B3
Fig. 11. Inductive Switching
Energy Loss vs. Gate Resistance
0
1
2
3
4
5
6
7
8
12345678910
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 14. Inductive Turn-off
Switching Times vs. Gate Resistance
210
220
230
240
250
260
270
280
290
300
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
200
300
400
500
600
700
800
900
1000
1100
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
Fig. 12. Inductive Switching
Energy Loss vs. Collector Current
0
1
2
3
4
5
6
7
8
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Inductive Switching
Energy Loss vs. Junction Temperature
0
1
2
3
4
5
6
7
8
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
Fig. 15. Inductive Turn-off
Switching Times vs. Collector Current
100
125
150
175
200
225
250
275
300
325
350
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
220
240
260
280
300
320
340
360
380
400
420
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 16. Inductive Turn-off
Switching Times vs. Junction Temperature
100
120
140
160
180
200
220
240
260
280
300
50 55 60 65 70 75 80 85 90 95 100
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
240
250
260
270
280
290
300
310
320
330
340
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGK320N60B3
IXGX320N60B3
IXYS REF: G_320N60B3(96)5-14-10
Fig. 18. Inductive Turn-on
Switching Times vs. Collector Current
20
30
40
50
60
70
80
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i
- Nanoseconds
34
36
38
40
42
44
46
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 19. Inductive Turn-on
Switching Times vs. Junction Temperature
10
20
30
40
50
60
70
80
90
100
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
32
34
36
38
40
42
44
46
48
50
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
30
40
50
60
70
80
90
100
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 50A
I
C
= 100A
P1-P3P4-P6

IXGK320N60B3

Mfr. #:
Buy IXGK320N60B3
Manufacturer:
Littelfuse
Description:
IGBT Modules GenX3 600V IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
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