NUP2114UPXV5T1G Datasheet NUP2114UCMR6T1G, NUP2114UPXV5T1G, SNUP2114UCMR6T1G | P1-P3

October, 2017 − Rev. 3

1 Publication Order Number:

NUP2114/D

NUP2114 Series, SNUP2114

ESD Protection Diode

Low Capacitance ESD Protection for

High Speed Data

The NUP2114 surge protection is designed to protect high speed

data lines from ESD. Ultra−low capacitance and high level of ESD

protection makes this device well suited for use in USB 2.0

applications.

Features

• Low Capacitance 0.8 pF

• Low Clamping Voltage

• Stand Off Voltage: 5 V

• Low Leakage

• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model

and Class C (Exceeding 400 V) per Machine Model

• Protection for the Following IEC Standards:

IEC 61000−4−2 Level 4 ESD Protection

• UL Flammability Rating of 94 V−0

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• High Speed Communication Line Protection

• USB 2.0 High Speed Data Line and Power Line Protection

• Monitors and Flat Panel Displays

• MP3

• Gigabit Ethernet

• Notebook Computers

• Digital Video Interface (DVI) and HDMI

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Operating Junction Temperature Range T

−40 to +125 °C

Storage Temperature Range T

stg

−55 to +150 °C

Lead Solder Temperature −

Maximum (10 Seconds)

260 °C

Human Body Model (HBM)

Machine Model (MM)

IEC 61000−4−2 Contact

IEC61000−4−2 Air

ESD 16000

400

13000

15000

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

See Application Note AND8308/D for further description of

survivability specs.

MARKING DIAGRAMS

SOT−553

CASE 463B

www.onsemi.com

P2, P2M = Specific Device Code

M = Date Code

G = Pb−Free Package

P2MG

PIN CONNECTIONS

I/O

(Note: Microdot may be in either location)

I/O

TSOP−6

CASE 318G

P2M MG

SOT−553

TSOP−6

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

SOT−553 TSOP−6

NUP2114 Series, SNUP2114

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

C Max. Capacitance @ V

= 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional

RWM

ELECTRICAL CHARACTERISTICS (T

=25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage V

RWM

(Note 1) 5.0 V

Breakdown Voltage V

= 1 mA, (Note 2) 5.5 7.5 V

Reverse Leakage Current I

RWM

= 5 V 0.01 1.0

Clamping Voltage V

= 5 A (Note 3) 9.0 V

Clamping Voltage V

= 8 A (Note 3) 10 V

Maximum Peak Pulse Current I

8x20 ms Waveform

12 A

Junction Capacitance C

= 0 V, f = 1 MHz between I/O Pins and GND 0.8 1.0 pF

Junction Capacitance C

= 0 V, f = 1 MHz between I/O Pins 0.5 pF

Clamping Voltage V

@ I

= 1 A (Note 4) 12 V

Clamping Voltage V

Per IEC 61000−4−2 (Note 5) Figures 1 and 2 V

1. Surge protection devices are normally selected according to the working peak reverse voltage (V

RWM

), which should be equal or greater

than the DC or continuous peak operating voltage level.

2. V

is measured at pulse test current I

3. Nonrepetitive current pulse (Pin 5 to Pin 2)

4. Surge current waveform per Figure 5.

5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

6. Include S-prefix devices where applicable.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

NUP2114 Series, SNUP2114

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

Device

Under

Test

Oscilloscope

ESD Gun

50 W

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 x 20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

P1-P3 P4-P6

NUP2114UPXV5T1G

Mfr. #:

Buy NUP2114UPXV5T1G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors LOW CAP TVS ARRAY

Lifecycle:

New from this manufacturer.

Delivery:

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