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VIT2080C-E3/4W

P1-P3P4-P6
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
1
Document Number: 89166
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.52 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 10 A
V
RRM
80 V
I
FSM
100 A
V
F
at I
F
= 10 A 0.60 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
1
2
3
1
K
2
3
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
K
TMBS
®
ITO-220AB
1
2
3
VT2080C
VFT2080C
VIT2080CVBT2080C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT2080C VFT2080C VBT2080C VIT2080C UNIT
Maximum repetitive peak reverse voltage V
RRM
80 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
I
FSM
100 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH per diode E
AS
110 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
1.0 A
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
2
Document Number: 89166
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.57 -
V
I
F
= 10 A 0.67 0.81
I
F
= 5 A
T
A
= 125 °C
0.52 -
I
F
= 10 A 0.60 0.70
Reverse current per diode V
R
= 80 V
T
A
= 25 °C
I
R
(2)
20 600 μA
T
A
= 125 °C 10 20 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT2080C VFT2080C VBT2080C VIT2080C UNIT
Typical thermal resistance
per diode
R
JC
3.0 6.0 3.0 3.0
°C/W
per device 2.0 5.0 2.0 2.0
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT2080C-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VFT2080C-E3/4W 1.73 4W 50/tube Tube
TO-263AB VBT2080C-E3/4W 1.36 4W 50/tube Tube
TO-263AB VBT2080C-E3/8W 1.36 8W 800/reel Tape and reel
TO-262AA VIT2080C-E3/4W 1.44 4W 50/tube Tube
VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
3
Document Number: 89166
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
Case Temperature (°C)
24
16
0
0 75 175
Average Forward Current (A)
25 100 150
4
50 125
8
20
12
Resistive or Inductive Load
V(B,I)T2080C
VFT2080C
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
8
7
0
0612
Average Power Loss (W)
2 8
1
410
4
2
5
D = t
p
/T t
p
T
6
3
D = 0.8
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
100
0.1
0 0.6 1.2
Instantaneous Forward Current (A)
0.2 0.8
1
0.4 1.0
T
A
= 100 °C
10
Percent of Rated Peak Reverse Voltage (%)
100
0.001
20 40 100
Instantaneous Reverse Current (mA)
50
1
30 60
10
9070
0.1
0.01
80
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
Reverse Voltage (V)
10 000
10
0.1 100
Junction Capacitance (pF)
1
100
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
t - Pulse Duration (s)
10
0.1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
V(B,I)T2080C
VFT2080C
Junction to Case
1
P1-P3P4-P6

VIT2080C-E3/4W

Mfr. #:
Buy VIT2080C-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20A 80V Dual TrenchMOS
Lifecycle:
New from this manufacturer.
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